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5962-9309103HYA 参数 Datasheet PDF下载

5962-9309103HYA图片预览
型号: 5962-9309103HYA
PDF下载: 下载PDF文件 查看货源
内容描述: [EEPROM Module, 512KX8, 250ns, Parallel, CMOS, DIP-32]
分类和应用: 可编程只读存储器电动程控只读存储器电可擦编程只读存储器内存集成电路
文件页数/大小: 13 页 / 153 K
品牌: MICROSS [ MICROSS COMPONENTS ]
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EEPROM
Austin Semiconductor, Inc.
ABSOLUTE MAXIMUM RATINGS*
Voltage on Vcc Supply Relative to Vss
Supply/Input Voltage Range
1
.........................-0.6V to +6.25V DC
Voltage on OE\ and A9....................................-0.6V to +13.5V DC
Voltage on all other pins..................................-0.6V to +6.25V DC
Storage Temperature.............................................-65°C to +150°C
Operating Temperature, T
A
(Ambient)................-55
o
C to +125
o
C
Lead Temperature (soldering 10 seconds)........................+300
o
C
Maximum Junction Temperature**....................................+165°C
NOTE:
1. Including NC pins, with respect to ground.
AS8E512K8
*Stresses greater than those listed under "Absolute Maximum
Ratings" may cause permanent damage to the device. This is
a stress rating only and functional operation of the device at
these or any other conditions above those indicated in the
operation section of this specification is not implied. Exposure
to absolute maximum rating conditions for extended periods
may affect reliability.
** Junction temperature depends upon package type, cycle
time, loading, ambient temperature and airflow.
PIN CAPACITANCE
(f= 1MHz, T = 25° C)
(1)
SYMBOL
C
ADD, OE\, WE\
C
I/O
C
CE\
CONDITIONS
V
IN
= 0V, f = 1MHz
V
OUT
= 0V, f = 1MHz
V
IN
= 0V, f = 1MHz
MAX
45
50
10
UNIT
pF
pF
pF
OPERATING MODES
MODE
Read
Write
2
CE\
V
IL
V
IL
V
IH
X
X
X
OE\
V
IL
V
IH
X
1
WE\
V
IH
V
IL
X
V
IH
X
X
I/O
D
OUT
D
IN
High Z
Standby/Write Inhibit
Write Inhibit
Write Inhibit
Output Disable
NOTE:
1. X can be V
IL
or V
IH.
2. Refer to AC Programming Waveforms.
X
V
IL
V
IH
High Z
ELECTRICAL CHARACTERISTICS AND RECOMMENDED DC OPERATING CONDITIONS
(-55
o
C<T
A
<+125
o
C; Vcc = 5V +10%)
PARAMETER
Input Load Current
Output Leakage Current
Vcc Standby Current CMOS
Vcc Standby Current TTL
Vcc Active Current
Input Low Voltage
Input High Voltage
Output Low Voltage
Output High Voltage
Output High Voltage CMOS
AS8E512K8
Rev. 2.0 12/99
CONDITION
V
IN
= OV to Vcc + 1V
V
I/O
= OV to Vcc
CE\ = Vcc -0.2V to Vcc + 1
CE\ = 2.2V to Vcc + 1
F = 5 MHz; I
OUT
= 0 mA
SYMBOL
I
LI
I
LO
I
SB1
I
SB2
I
CC
V
IL
V
IH
I
OL
= 2.1 mA
V
OL
V
OH1
V
OH2
MIN
-20
-20
MAX
20
20
UNITS
µΑ
µΑ
mA
20
120
0.8
2
0.45
2.4
4.2
mA
mA
V
V
V
V
V
I
OH
= -400
µA
I
OH
= -100
µA;
Vcc = 4.5V
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
3