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5962-9231603MYA 参数 Datasheet PDF下载

5962-9231603MYA图片预览
型号: 5962-9231603MYA
PDF下载: 下载PDF文件 查看货源
内容描述: [Standard SRAM, 1MX1, 25ns, CMOS, CDSO32, CERAMIC, LCC-32]
分类和应用: 静态存储器内存集成电路
文件页数/大小: 13 页 / 132 K
品牌: MICROSS [ MICROSS COMPONENTS ]
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SRAM  
MT5C1001  
Limited Availability  
AC TEST CONDITIONS  
Input pulse levels ................................... Vss to 3.0V  
Input rise and fall times ....................................... 5ns  
Input timing reference levels ............................. 1.5V  
Output reference levels ..................................... 1.5V  
Output load .............................. See Figures 1 and 2  
Q
Q
VTH  
=
VTH =  
5pF  
Fig. 1 Output Load  
Equivalent  
Fig. 2 Output Load  
Equivalent  
allowing for actual tester RC time constant.  
7. At any given temperature and voltage condition,  
NOTES  
1. All voltages referenced to VSS (GND).  
2. -3V for pulse width < 20ns  
tHZCE is less than tLZCE, and tHZWE is less than tLZWE and  
3. ICC is dependent on output loading and cycle rates.  
The specied value applies with the outputs  
tHZOE is less than tLZOE  
8. WE\ is HIGH for READ cycle.  
9. Device is continuously selected. Chip enables and  
output enables are held in their active state.  
10. Address valid prior to, or coincident with, latest  
occurring chip enable.  
.
unloaded, and f =  
1
Hz.  
tRC (MIN)  
4. This parameter is guaranteed but not tested.  
5. Test conditions as specied with the output loading  
as shown in Fig. 1 unless otherwise noted.  
11. tRC = Read Cycle Time.  
12. Chip enable (CE\) and write enable (WE\) can initiate  
6. tLZCE, tLZWE, tLZOE, t HZCE, tHZOE and tHZWE are  
specied with CL = 5pF as in Fig. 2. Transition is  
and  
terminate a WRITE cycle.  
measured ±200mV typical from steady state voltage,  
DATA RETENTION ELECTRICAL CHARACTERISTICS (L Version Only)  
DESCRIPTION  
CC for Retention Data  
SYMBOL  
VDR  
MIN  
2
MAX  
--  
UNITS  
V
NOTES  
CONDITIONS  
V
VCC = 2V  
ICCDR  
1.0  
mA  
CE\ > (VCC - 0.2V)  
and  
Data Retention Current  
V
IN > (VCC - 0.2V)  
VCC = 3V  
1.5  
--  
mA  
ns  
or < 0.2V  
tCDR  
tR  
Chip Deselect to Data  
Retention Time  
0
4
tRC  
4, 11  
Operation Recovery Time  
ns  
LOW Vcc DATA RETENTION WAVEFORM  
DATA RETENTION MODE  
VCC  
4.5V  
4.5V  
VDR > 2V  
tCDR  
tR  
VIH  
VIL  
VDR  
CE\  
DON’T CARE  
UNDEFINED  
Micross Components reserves the right to change products or specications without notice.  
MT5C1001  
Rev. 2.2 01/10  
5