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5962-3829455MUA 参数 Datasheet PDF下载

5962-3829455MUA图片预览
型号: 5962-3829455MUA
PDF下载: 下载PDF文件 查看货源
内容描述: [Standard SRAM, 8KX8, 25ns, CMOS, CQCC28, CERAMIC, LCC-28]
分类和应用: 静态存储器内存集成电路
文件页数/大小: 12 页 / 170 K
品牌: MICROSS [ MICROSS COMPONENTS ]
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SRAM  
MT5C6408  
AC TEST CONDITIONS  
Input pulse levels ...................................... Vss to 3.0V  
Input rise and fall times ......................................... 5ns  
Input timing reference levels ................................ 1.5V  
Output reference levels ....................................... 1.5V  
Output load ................................. See Figures 1 and 2  
167Ω  
167Ω  
Q
Q
VTH = 1.73V  
VTH = 1.73V  
5pF  
30pF  
Fig. 1 Output Load  
Equivalent  
Fig. 2 Output Load  
Equivalent  
7. At any given temperature and voltage condition,  
tHZCE is less than tLZCE, and tHZWE is less than tLZWE and  
NOTES  
1. All voltages referenced to VSS (GND).  
2. -3V for pulse width < 20ns  
tHZOE is less than tLZOE  
.
3. ICC is dependent on output loading and cycle rates.  
The specied value applies with the outputs  
8. WE\ is HIGH for READ cycle.  
9. Device is continuously selected. Chip enables and  
output enables are held in their active state.  
10. Address valid prior to, or coincident with, latest  
occurring chip enable.  
unloaded, and f =  
1
Hz.  
tRC (MIN)  
4. This parameter is guaranteed but not tested.  
5. Test conditions as specied with the output loading  
as shown in Fig. 1 unless otherwise noted.  
t
11. RC = Read Cycle Time.  
12. CE2 timing is the same as CE1\ timing. The waveform  
6. tLZCE, tLZWE, tLZOE, tHZCE, tHZOE and tHZWE  
are specied with CL = 5pF as in Fig. 2. Transition is  
measured ±200mV typical from steady state voltage,  
allowing for actual tester RC time constant.  
is  
inverted.  
13. Chip enable (CE1\, CE2) and write enable (WE\) can  
initiate and terminate a WRITE cycle.  
DATA RETENTION ELECTRICAL CHARACTERISTICS (L Version Only)  
DESCRIPTION  
CONDITIONS  
SYM  
MIN  
MAX UNITS NOTES  
2
---  
300  
---  
V
V
CC for Retention Data  
VDR  
CE\ > (VCC - 0.2V)  
Data Retention Current  
μA  
VCC = 2V ICCDR  
VIN > (VCC - 0.2V)  
or < 0.2V  
Chip Deselect to Data  
Retention Time  
tCDR  
tR  
0
ns  
ns  
4
Operation Recovery Time  
4, 11  
tRC  
LOW Vcc DATA RETENTION WAVEFORM  
DATA RETENTION MODE  
VCC  
4.5V  
4.5V  
VDR > 2V  
tCDR  
tR  
VIH  
VIL  
VDR  
CE\  
DON’T CARE  
UNDEFINED  
Micross Components reserves the right to change products or specications without notice.  
MT5C6408  
Rev. 4.2 01/10  
5