EEPROM
AS28C010
AC ELECTRICAL CHARACTERISTICS FOR READ OPERATION
(-55oC < TC < 125oC; Vcc = 5V +10%)
Test Conditions
ꢀ Input Pulse Levels:
ꢀ Input rise and fall times:
ꢀ Output Load:
0.0V to 3.0V
< 20ns
1 TTL Gate +100pF (including scope and jig)
ꢀ Reference levels for measuring timing: 1.5V, 1.5V
-12
-15
-20
-25
Symbol
tRC
Parameter
UNITS
MIN MAX MIN MAX MIN MAX MIN MAX
Read Cycle Time
120
150
200
250
ns
ns
ns
ns
tCE
tAA
tOE
Chip Enable Access Time
Address Access Time
120
120
50
150
150
50
200
200
50
250
250
50
Output Enable Access Time
(3)
tLZ
CE\ LOW to Active Output
OE\ LOW to Active Output
CE\ HIGH to High Z Output
OE\ HIGH to High Z Output
Output Hold from Address Change
0
0
0
0
0
0
0
0
ns
ns
ns
ns
ns
(3)
tOLZ
(3)
tHZ
50
50
50
50
50
50
50
50
(3)
tOHZ
tOH
0
0
0
0
Notes: 3) tLZ min., tOLZ min., and tOHZ are periodically sampled and not 100% tested. tHZ max. and tOHZ max. are measured,
with CL=5pF, from the point when CE\ or OE\ return HIGH (whichever occurs first) to the time when the
outputs are no longer driven.
AC ELECTRICAL CHARACTERISTICS FOR WRITE OPERATIONS
MIN
MAX
SYMBOL PARAMETER
UNITS
tWC
10
ms
Write Cycle Time
tAS
0
50
0
ns
ns
ns
ns
ns
Address Setup Time
tAH
Address Hold Time
tcs
tCH
Write Setup Time
Write Hold Time
0
tCW
tOES
tOEH
tWP
tWPH
tDV
100
CE\ Pulse Width
OE\ HIGH Setup Time
OE\ HIGH Hold Time
WE\ Pulse Width
WE\ HIGH Recovery
Data Valid
10
10
ns
ns
ns
100
100
ns
Ps
1
tDS
50
0
ns
Data Setup
tDH
ns
Data Hold
Ps
tDW
tBLC
10
Delay to Next Write
Byte Load Cycle
Ps
0.20
100
Micross Components reserves the right to change products or specifications without notice.
AS28C010
Rev. 1.6 01/10
6
MICROSS [ MICROSS COMPONENTS ]
