2N4416
N-CHANNEL JFET
Linear Systems replaces discontinued Siliconix 2N4416
The 2N4416 is a N-Channel high frequency JFET amplifier
The 2N4416
N-channel JFET is designed to provide
high-performance amplification at high frequencies.
The hermetically sealed TO-18 package is well suited
for military applications and harsh environment
applications.
FEATURES
DIRECT REPLACEMENT FOR SILICONIX 2N4416
EXCEPTIONAL GAIN (400 MHz)
VERY LOW NOISE FIGURE (400 MHz)
VERY LOW DISTORTION
HIGH AC/DC SWITCH OFF‐ISOLATION
ABSOLUTE MAXIMUM RATINGS
@ 25°C (unless otherwise noted)
Maximum Temperatures
Storage Temperature
Operating Junction Temperature
Maximum Power Dissipation
Continuous Power Dissipation
MAXIMUM CURRENT
Gate Current (Note 1)
MAXIMUM VOLTAGES
Gate to Drain or Gate to Source
10dB (min)
4dB (max)
2N4416 Benefits:
Wideband High Gain
Very High System Sensitivity
High Quality of Amplification
High-Speed Switching Capability
High Low-Level Signal Amplification
‐65°C to +200°C
‐55°C to +135°C
300mW
10mA
‐30V
2N4416 Applications:
High-Frequency Amplifier / Mixer
Oscillator
Sample-and-Hold
Very Low Capacitance Switches
2N4416 ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted)
SYMBOL
BV
GSS
V
GS(off)
I
DSS
I
GSS
g
fs
g
os
C
iss
2
C
rss
Reverse Transfer Capacitance
‐‐
‐‐
4
pF
C
oss
Output Capacitance
2
‐‐
‐‐
2
pF
e
n
Equivalent Input Noise Voltage
‐‐
6
‐‐
nV/√Hz
2N4416 HIGH FREQUENCY ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted)
SYMBOL
CHARACTERISTIC
100 Mhz
400 Mhz
UNITS
MIN
MAX
MIN
MAX
g
Iss
b
Iss
g
oss
b
oss
G
fs
G
ps
NF
NOTES
Input Conductance
Input Susceptance
Output Conductance
Output Susceptance
Forward Transconductance
Power Gain
Noise Figure
2
2
2
2
CONDITIONS
‐‐
‐‐
‐‐
‐‐
‐‐
18
‐‐
100
2500
75
1000
‐‐
‐‐
2
‐‐
‐‐
‐‐
‐‐
4000
10
‐‐
1000
10000
100
4000
‐‐
‐‐
4
dB
µS
1 . Absolute maximum ratings are limiting values above which 2N4416 serviceability may be impaired.
2. Not production tested, guaranteed by design
Available Packages:
2N4416 in TO-18
2N4416 in bare die.
TO-18 (Bottom View)
V
DS
= 15V, V
GS
= 0V, f = 1MHz
V
DS
= 10V, V
GS
= 0V, f = 1kHz
V
DS
= 15V, V
GS
= 0V
V
DS
= 15V, I
D
= 5mA
V
DS
= 15V, I
D
= 5mA, R
G
= 1kΩ
Micross Components Europe
Tel: +44 1603 788967
Email:
chipcomponents@micross.com
Web:
http://www.micross.com/distribution
Please contact Micross for full
package and die dimensions
Information furnished by Linear Integrated Systems and Micross Components is believed to be accurate and reliable. However, no responsibility is assumed
for its use; nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise
under any patent or patent rights of Linear Integrated Systems.
Micross Components Ltd, United Kingdom, Tel: +44 1603 788967, Fax: +44 1603788920, Email:
chipcomponents@micross.com
Web:
www.micross.com/distribution.aspx