SG1524B/SG2524B/SG3524B
ELECTRICAL CHARACTERISTICS
Parameter
(continued)
Test Conditions
SG1524B/2524B
SG3524B
Units
Min. Typ. Max. Min. Typ. Max.
42
45
0.1
1
50
600
3.5
1
4.0
0.5
0.5
1
60
3.8
70
76
1
78
0.2
4.2
90
100
2
48
1
2
140
3.9
0.6
3.0
0.2
40
45
0.1
1
50
600
3.5
1
4.0
0.5
2
1
60
0.5
3.8
70
76
1
0
45
180
49
200
-3
220
-10
45
170
49
200
-3
230
-10
78
0.2
4.2
90
100
2
50
1
2
120
3.9
KHz
%
%
Hz
KHz
V
V
V
µs
mV
µA
µA
dB
V
V
dB
dB
MHz
%
%
mV
µA
V
mA
V
µA
V
V
V
V
µs
µs
mA
Oscillator Section
(Note 4)
Initial Accuracy
T
J
= 25°C
Voltage Stability
V
IN
= 7V to 40V
Temperature Stability
(Note 7)
Over Operating Range
Minimum Frequency
(Note 7)
R
T
= 150KΩ, C
T
= 0.1µF
Maximum Frequency
R
T
= 2KΩ, C
T
= 470pF
Sawtooth Peak Voltage
V
IN
= 40V
Sawtooth Valley Voltage
V
IN
= 7V
Clock Amplitude
Clock Pulse Width
Error Amplifier Section
(Note 5)
Input Offset Voltage
R
S
≤
2KΩ
Input Bias Current
Input Offset Current
DC Open Loop Gain
R
L
≥10MΩ
I
SINK
= 100µA; V
PIN 1
- V
PIN 2
≥
150mV
Output Low Level
Output High Level
I
SOURCE
= 100µA; V
PIN 2
- V
PIN 1
≥
150mV
V
CM
= 2.3V to V
REF
Common Mode Rejection
Supply Voltage Rejection
V
IN
= 7V to 40V
Gain-Bandwidth Product
(Note 7 )
T
J
= 25°C
P.W.M. Comparator
(Note 4)
Minimum Duty Cycle
V
COMP
= 0.5V
Maximum Duty Cycle
V
COMP
= 3.9V
Current Limit Amplifier Section
(Note 6)
Sense Voltage
Input Bias Current
Shutdown Input Section
HIGH Input Voltage
HIGH Input Current
V
SHUTDOWN
= 5.0V
LOW Input Voltage
Output Section
(each transistor)
Collector Leakage Current
V
CE
= 60V
Collector Saturation Voltage
I
C
= 10mA
I
C
= 100mA
Emitter Output Voltage
I
E
= 10mA
I
E
= 100mA
Emitter Voltage Rise Time
(Note 7)
R
E
= 2KΩ, T
A
= 25°C
Collector Voltage Fall Time
R
C
= 2KΩ, T
A
= 25°C
Power Consumption
Standby Current
Note 4.
Note 5.
Note 6.
Note 7.
400
0.6
3.0
0.2
400
1.2
5
5
1
1.2
10
10
1
0.5
0
2.0
0.1
1
0.6
50
0.4
2.0
2.0
0.1
1
0.6
50
0.4
2.0
17.5
17
0.2
1.0
19
18
0.2
0.1
5
17.5
17
0.5
0.2
12
0.2
1.0
19
18
0.2
0.1
5
0.5
0.2
12
V
IN
= 40V, V
SHUTDOWN
= 2.0V
F
OSC
= 45KHz (R
T
= 2700Ω, C
T
= .01µF)
V
CM
= 2.3V to V
REF
V
CM
= 0V to 17.5V
These parameters, although guaranteed over the recommended operating conditions, are not tested in production.
2/00 Rev 1.3 2/00
Copyright
2000
3
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∞
Garden Grove, CA 92841
(714) 898-8121
∞
FAX: (714) 893-2570
L
INFINITY
Microelectronics Inc.
MICROSEMI [ MICROSEMI CORPORATION ]
