MRF581
MRF581G
MRF581A
MRF581AG
FUNCTIONAL
Symbol
NF
Test Conditions
Noise Figure (50ohms)
(IC = 50 mAdc, VCE = 10 Vdc, f = 0.5 GHz)
Power Gain @ NFmin
(IC = 50 mAdc, VCE = 10 Vdc, f = 0.5 GHz)
Maximum Unilateral Gain (1)
IC = 50 mAdc, VCE = 10 Vdc, f = 500 MHz
Maximum Stable Gain
IC = 50 mAdc, VCE = 10 Vdc, f = 500 MHz
Insertion Gain
IC = 50 mAdc, VCE = 10 Vdc, f = 500 MHz
Value
Min.
-
13
-
-
14
Typ.
3.0
15.5
17.8
20
15
-
-
-
Max.
3.5
Unit
dB
dB
dB
dB
dB
G
G
NF
U max
MSG
|S
21
|
2
Table 1. Common Emitter S-Parameters, @ VCE = 10 V, IC = 50 mA
f
S11
S21
S12
S22
(MHz)
100
200
300
400
500
600
700
800
900
1000
|S11|
.610
.659
.671
.675
.677
.678
.677
.679
.678
.682
∠φ
-137
-161
-171
-178
176
172
168
184
160
156
|S21|
23.8
13.2
9.0
6.8
5.5
4.6
4.0
3.5
3.1
2.8
∠φ
116
98
89
83
77
72
68
64
60
56
|S12|
.026
.033
.040
.047
.055
.064
.073
.082
.092
.102
∠φ
46
47
51
55
58
61
62
63
64
65
|S22|
.522
.351
.304
.292
.293
.299
.306
.314
.322
.311
∠φ
-78
-106
-120
-128
-132
-134
-135
-136
-138
-139
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MICROSEMI [ MICROSEMI CORPORATION ]
