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MMAD130 参数 Datasheet PDF下载

MMAD130图片预览
型号: MMAD130
PDF下载: 下载PDF文件 查看货源
内容描述: 开关二极管阵列转向二极管TVS ArrayTM [Switching Diode Array Steering Diode TVS ArrayTM]
分类和应用: 二极管开关电视
文件页数/大小: 2 页 / 59 K
品牌: MICROSEMI [ MICROSEMI CORPORATION ]
 浏览型号MMAD130的Datasheet PDF文件第2页  
MMAD130
Switching Diode Array
Steering Diode TVS Array
TM
SCOTTSDALE DIVISION
DESCRIPTION
These low capacitance diode arrays are multiple, discrete, isolated junctions
fabricated by a planar process and mounted in a 14-PIN package for use as
steering diodes protecting up to ten I/O ports from ESD, EFT, or surge by
directing them either to the positive side of the power supply line or to
ground (see figure 1). An external TVS diode may be added between the
positive supply line and ground to prevent overvoltage on the supply rail.
They may also be used in fast switching core-driver applications. This
includes computers and peripheral equipment such as magnetic cores, thin-
film memories, plated-wire memories, etc., as well as decoding or encoding
applications. These arrays offer many advantages of integrated circuits such
as high-density packaging and improved reliability. This is a result of fewer
pick and place operations, smaller footprint, smaller weight, and elimination
of various discrete packages that may not be as user friendly in PC board
mounting.
SWITCHING AND
STEERING ARRAY
WWW.
Microsemi
.
C O M
1
2
3
4
5
6
7
14
13
12
11
10
9
8
IMPORTANT:
For the most current data, consult
MICROSEMI’s
website:
http://www.microsemi.com
Top Viewing Pin Layout
FEATURES
20 Diode Array / protects 10 lines
Molded 14-Pin SOIC Package
UL 94V-0 Flammability Classification
Low Capacitance 1.5 pF per diode
Switching speeds less than 5 ns
IEC 61000-4 compatible
61000-4-2 (ESD): Air 15kV, contact – 8 kV
61000-4-4 (EFT): 40A – 5/50 ns
61000-4-5 (surge): 12A, 8/20
µs
A P P L I C A T I O N S / B E N E FI T S
High Frequency Data Lines
RS-232 & RS-422 Interface Networks
Ethernet: 10 Base T
Computer I / O Ports
LAN
Switching Core Drivers
MAXIMUM RATINGS
Operating Temperature: -55°C to +150°C
Storage Temperature: -55°C to +150°C
Forward Surge Current: 2 Amps (8.3 ms)
12 Amps (8/20
µs
)
Continuous Forward Current: 400 mA (one diode)
Power Dissipation (P
D
): 1500 mW (total)
M E C H A N I C A L A N D P A C K AG I N G
Weight 0.127 grams (approximate)
Marking: Logo, device number, date code
Pin #1 defined by indent on top of package
Tape & Reel packaging: 2500 pcs (STANDARD)
Carrier tube packaging: 55 pcs
ELECTRICAL CHARACTERISTICS PER LINE @ 25°C Unless otherwise specified
BREAKDOWN
VOLTAGE
V
BR
@ I
BR
=100µA
V
MIN
MMAD130
90
WORKING
PEAK
REVERSE
VOLTAGE
V
RWM
V
MAX
75
LEAKAGE
CURRENT
I
R
T
A
= 25°C
µA
MAX
0.200
@V
R
20
MAX
300
LEAKAGE
CURRENT
I
R
T
A
= 150°C
µA
@V
R
20
CAPACITANCE
C
@0V
pF
TYP
1.5
REVERSE
RECOVERY
TIME
t
rr
ns
MAX
5.0
FORWARD
VOLTAGE
V
F
I
F
= 10 mA
V
MAX
1.00
FORWARD
VOLTAGE
V
F
I
F
= 100 mA
V
MAX
1.20
MMAD130
PART
NUMBER
Copyright
©
2001
MSCXXXX.PDF 06-24 2002 REV J
Microsemi
Page 1
Scottsdale Division
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503