MDS150
150 Watts, 50 Volts, Pulsed
Avionics 1030 - 1090 MHz
GENERAL DESCRIPTION
The MDS150 is a high power COMMON BASE bipolar transistor. It is
designed for MODE-S systems in the 1030 - 1090 MHz frequency band. The
transistor includes input prematch for broadband performance. The device has
gold thin-film metallization and diffused ballasting in a hermetically sealed
package for proven highest MTTF.
CASE OUTLINE
55AW Style 1
ABSOLUTE MAXIMUM RATINGS
Maximum Power Dissipation
350 W
Device Dissipation @25°C
1
Maximum Voltage and Current
Collector to Emitter Voltage (BV
ces
)
60 V
Emitter to Base Voltage (BV
ebo
)
3.5 V
Peak Collector Current (I
c
)
4A
Maximum Temperatures
Storage Temperature
-65 to +150
°C
Operating Junction Temperature
+200
°C
ELECTRICAL CHARACTERISTICS @ 25°C
SYMBOL
P
out
P
in
P
g
η
c
VSWR
1
Pd
1
Trise
1
CHARACTERISTICS
Power Out
Power Input
Power Gain
Collector Efficiency
Load Mismatch Tolerance
Pulse Droop
Rise Time
TEST CONDITIONS
F = 1030, 1090 MHz
Vcc = 50 Volts
PW = Note 2
DF = Note 2
MIN
150
20
10
34
3:1
0.5
100
TYP
MAX
UNITS
W
W
dB
%
dB
nSec
FUNCTIONAL CHARACTERISTICS @ 25°C
BV
ebo
BV
ces
BV
cbo
h
FE
θjc
1
Emitter to Base Breakdown
Collector to Emitter Breakdown
Collector to Base Breakdown
DC – Current Gain
Thermal Resistance
Ie = 5 mA
Ic = 25 mA
Ic = 25 mA
Vce = 5V, Ic = 500 mA
3.5
60
60
20
0.5
V
V
V
°C/W
NOTE 1: AT RATED OUTPUT POWER AND PULSE CONDITIONS
NOTE 2: Burst: 0.5uS ON, 0.5uS OFF x 120, repeated every 6.4mS
Initial Release - August 2007 Rev. A
Microsemi reserves the right to change, without notice, the specifications and information contained herein. Visit
our web site at
www.microsemi.com
or contact our factory direct.
MICROSEMI [ MICROSEMI CORPORATION ]
