LC6.5 thru LC170A, e3
1500 WATT LOW CAPACITANCE
TRANSIENT VOLTAGE SUPPRESSOR
SCOTTSDALE DIVISION
DESCRIPTION
This hermetically sealed Transient Voltage Suppressor (TVS) product family
includes a rectifier diode element in series and opposite direction to achieve low
capacitance performance below 100 pF (see Figure 2). The low level of TVS
capacitance may be used for protecting higher frequency applications in inductive
switching environments or electrical systems involving secondary lightning effects
per IEC61000-4-5 as well as RTCA/DO-160D or ARINC 429 for airborne
avionics. With virtually instantaneous response, they also protect from ESD and
EFT per IEC61000-4-2 and IEC61000-4-4. If bipolar transient capability is
required, two of these low capacitance TVS devices may be used in parallel in
opposite directions (anti
-
parallel) for complete ac protection as shown in Figure 4.
IMPORTANT:
For the most current data, consult
MICROSEMI’s
website:
APPEARANCE
WWW .
Microsemi
.C
OM
DO-13
(DO-202AA)
FEATURES
•
•
•
•
•
•
Unidirectional low-capacitance TVS series for flexible
thru-hole mounting (for bidirectional see Figure 4)
Suppresses transients up to 1500 watts @ 10/1000 µs
(see Figure 1)*
Clamps transient in less than 100 pico seconds
Working voltage (V
WM
) range 6.5 V to 170 V
Hermetic sealed DO-13 metal package
Options for screening in accordance with MIL-PRF-
19500 for JAN, JANTX, JANTXV, and JANS are also
available by adding MQ, MX, MV, MSP prefixes
respectively to part numbers, e.g. MXLC6.5A, etc.
Surface mount equivalent packages also available as
SMCJLCE6.5 - SMCJLCE170A or SMCGLCE6.5 -
SMCGLCE170A in separate data sheet (consult factory
for other surface mount options)
Plastic axial-leaded equivalents available in the LCE6.5
- LCE170A series in separate data sheet
RoHS Compliant devices available by adding “e3” suffix
•
•
•
APPLICATIONS / BENEFITS
Protection from switching transients and induced RF
Low capacitance for data line protection up to 1 MHz
Protection for aircraft fast data rate lines up to Level 5
Waveform 4 and Level 2 Waveform 5A in RTCA/DO-
160D (also see MicroNote 130) & ARINC 429 with bit
rates of 100 kb/s (per ARINC 429, Part 1, par 2.4.1.1)
ESD & EFT protection per IEC 61000-4-2 and -4-4
Secondary lightning protection per IEC61000-4-5 with
42 Ohms source impedance:
Class 1:
Class 2:
Class 3:
Class 4:
LC6.5 to LC170A
LC6.5 to LC150A
LC6.5 to LC70A
LC6.5 to LC36A
•
•
•
•
Secondary lightning protection per IEC61000-4-5 with
12 Ohms source impedance:
Class 1 :
Class 2:
Class 3:
Class 4:
LC6.5
LC6.5
LC6.5
LC6.5
to LC90A
to LC45 A
to LC22A
to LC11A
•
•
•
Secondary lightning protection per IEC61000-4-5 with
2 Ohms source impedance:
Class 2: LC6.5 to LC20A
Class 3: LC6.5 to LC10A
•
Inherently radiation hard per Microsemi MicroNote 050
MAXIMUM RATINGS
•
1500 Watts at 10/1000
μs
with repetition rate of 0.01% or
o
less*
at lead temperature (T
L
) 25 C (see Figs. 1, 2, & 4)
o
o
•
Operating & Storage Temperatures: -65 to +175 C
•
THERMAL RESISTANCE: 50
o
C/W (Typical) junction to
lead at 0.375 inches (10 mm) from body or 110
o
C/W
junction to ambient when mounted on FR4 PC board with
4 mm
2
copper pads (1 oz) and track width 1 mm, length
25 mm
•
DC Power Dissipation
*
: 1 Watt at T
L
< +125
o
C 3/8” (10
mm) from body (see derating in Fig 3 and note below)
•
Solder Temperatures: 260
o
C for 10 s (maximum)
MECHANICAL AND PACKAGING
•
CASE: DO-13 (DO-202AA), welded, hermetically
sealed metal and glass
•
FINISH: All external metal surfaces are Tin-Lead
plated and solderable per MIL-STD-750 method 2026
•
POLARITY: Cathode connected to case as shown by
diode symbol (cathode positive for normal operation)
•
MARKING: Part number and polarity diode symbol
•
WEIGHT: 1.4 grams. (Approx)
•
TAPE & REEL option: Standard per EIA-296 (add
“TR” suffix to part number)
•
See package dimension on last page
LC6.5 thru LC170A
*
TVS devices are not typically used for dc power dissipation and are instead operated < V
WM
(rated standoff voltage) except for transients that briefly
drive the device into avalanche breakdown (V
BR
to V
C
region) of the TVS element. Also see Figures 3 and 4 for further protection details in rated peak
pulse power for unidirectional and bidirectional configurations respectively.
Copyright
©
2008
10-29-2008 REV E
Microsemi
Scottsdale Division
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503
Page 1
MICROSEMI [ MICROSEMI CORPORATION ]
