2N2222A
Electrical Characteristics (T = 25°C unless otherwise noted)
A
OFF CHARACTERISTIC
SYMBOL
V(BR)CEO
MIN
50
75
6
MAX
UNIT
Vdc
Collector - Emitter Breakdown Voltage
( IC = 10 mA dc, IB = 0 )
Collector - Base Breakdown Voltage
( IC = 10 mAdc, IE = 0 )
Emitter - Base Breakdown Voltage
( IE = 10 mAdc, IC = 0 )
(1)
(1)
(1)
V(BR)CBO
V(BR)EBO
ICES
Vdc
Vdc
Collector - Emitter Cutoff Current
( VCE = 50 Vdc, VBE(off) = 0 V )
Collector - Base Cutoff Current
( VCB = 60 Vdc, IE = 0 )
50
nAdc
ICBO
10
10
nAdc
mAdc
( VCB = 60 Vdc, IE = 0, TA = 150 °C )
Emitter - Base Cutoff Current
IEBO
( VEB = 4 Vdc )
10
nAdc
UNIT
ON CHARACTERISTIC
DC Current Gain
SYMBOL
hFE
MIN
MAX
50
75
100
100
30
( IC = 100 mA dc, VCE = 10 Vdc )
( IC = 1 mA dc, VCE = 10 Vdc )
( IC = 10 mA dc, VCE = 10 Vdc )
( IC = 150 mA dc, VCE = 10 Vdc )
( IC = 500 mA dc, VCE = 10 Vdc )
325
300
(1)
(1)
35
( IC = 10 mA dc, VCE = 10 Vdc, TJ = -55°C )
Collector - Emitter Saturation Voltage
VCE(sat)
( IC = 150 mAdc, IB = 15 mAdc )
( IC = 500 mAdc, IB = 50 mAdc )
Base - Emitter Saturation Voltage
( IC = 150 mAdc, IB = 15 mAdc )
( IC = 500 mAdc, IB = 50 mAdc )
(1)
(1)
0.3
1.0
Vdc
Vdc
VBE(sat)
(1)
(1)
0.6
1.2
2.0
Vdc
Vdc
1. Pulse Test: Pulse Width £ 300 ms, Duty Cycle £ 2.0%
MSCO275A 01-29-98
DSW2N2222A < - > ( 33807)
MICROSEMI [ Microsemi ]
