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18936-1013
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FAX: (215) 631-9855
BFY90
RF & MICROWAVE DISCRETE
LOW POWER TRANSISTORS
Features
•
•
•
•
Silicon NPN, To-72 packaged VHF/UHF Transistor
Low Noise, 2.5 dB (typ) @ 500 MHz, 5v, 2.0 mA,
1.3 GHz Current-Gain Bandwidth Product @ 25mA IC
2
1
3
4
Power Gain, G
PE
= 19 dB (typ) @ 200 MHz
1. Emitter
2. Base
3. Collector
4. Case
TO-72
DESCRIPTION:
Silicon NPN transistor, designed for VHF/UHF equipment. Applications include low noise amplifier; oscillator, and mixer
applications.
ABSOLUTE MAXIMUM RATINGS
(Tcase = 25
°
C)
Symbol
V
CEO
V
CBO
V
EBO
I
C
Parameter
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
Value
15
30
2.5
50
Unit
Vdc
Vdc
Vdc
mA
Thermal Data
P
D
Total Device Dissipation @ T
A
= 25ºC
Derate above 25ºC
200
1.14
mWatts
mW/ ºC
MSC1310.PDF 10-25-99
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