TECHNICAL DATA
NPN POWER SILICON TRANSISTOR
Qualified per MIL-PRF-19500/525
Devices
2N6546
2N6547
Qualified Level
JAN
JANTX
JANTXV
MAXIMUM RATINGS
Ratings
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Base Current
Collector Current
Total Power Dissipation
Symbol
V
CEO
V
CEX
V
EBO
I
B
I
C
P
T
T
op,
T
stg
Symbol
2N6546
300
600
2N6547
400
850
Units
Vdc
Vdc
Vdc
Adc
Adc
W
W
0
C
Unit
C/W
*See Appendix A for Package
Outline
@ T
C
= +25
0
C
(1)
@ T
C
= +100
0
C
(1)
Operating & Storage Temperature Range
8
10
15
175
100
-65 to +200
TO-3 (TO-204AA)*
THERMAL CHARACTERISTICS
Max.
1.0
R
θ
JC
0
0
1) Between T
C
= +25 C and T
C
= +200 C, linear derating factor (average) = 1.0 W/
0
C
Characteristics
Thermal Resistance, Junction-to-Case
0
ELECTRICAL CHARACTERISTICS
Characteristics
Symbol
Min.
Max.
Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
I
C
= 100 mAdc
Collector-Emitter Cutoff Current
V
CE
= 600 Vdc; V
BE
= 1.5 Vdc
V
CE
= 850 Vdc; V
BE
= 1.5 Vdc
Emitter-Base Cutoff Current
V
EB
= 8 Vdc
2N6546
2N6547
2N6546
2N6547
V
(BR)
CEO
300
400
1.0
1.0
1.0
Vdc
I
CEX
I
EBO
mAdc
mAdc
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
120101
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