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2N6287 参数 Datasheet PDF下载

2N6287图片预览
型号: 2N6287
PDF下载: 下载PDF文件 查看货源
内容描述: PNP达林顿功率硅晶体管 [PNP DARLINGTON POWER SILICON TRANSISTOR]
分类和应用: 晶体晶体管功率双极晶体管开关局域网
文件页数/大小: 2 页 / 59 K
品牌: MICROSEMI [ MICROSEMI CORPORATION ]
 浏览型号2N6287的Datasheet PDF文件第2页  
TECHNICAL DATA
PNP DARLINGTON POWER SILICON TRANSISTOR
Qualified per MIL-PRF-19500/505
Devices
2N6286
2N6287
Qualified Level
JANTX
JANTXV
MAXIMUM RATINGS
Ratings
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Base Current
Collector Current
Total Power Dissipation
(1)
Symbol
V
CEO
V
CBO
V
EBO
I
B
I
C
P
T
T
op
,
T
stg
Symbol
R
θ
JC
0
2N6286
-80
-80
2N6287
-100
-100
Unit
Vdc
Vdc
Vdc
Adc
Adc
W
W
0
C
Unit
0
C/W
@ T
C
= +25
0
C
@ T
C
= +100
0
C
Operating & Storage Junction Temperature Range
-7.0
-0.5
-20
175
87.5
-65 to +175
Max.
0.857
THERMAL CHARACTERISTICS
Characteristics
Thermal Resistance, Junction-to-Case
TO-3*
(TO-204AA)
*See appendix A for
package outline
1)
Derate linearly @ 1.17 W/ C above T
C
> +25 C
ELECTRICAL CHARACTERISTICS (T
C
= 25
0
C unless otherwise noted)
Characteristics
Symbol
Min.
Max.
Unit
0
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
I
C
=-100 mAdc
Collector-Emitter Cutoff Current
V
CE
= -40 Vdc
V
CE
= -50 Vdc
Collector-Emitter Cutoff Current
V
CE
= -80 Vdc, V
BE
= 1.5 Vdc
V
CE
= -100 Vdc, V
BE
= 1.5 Vdc
Emitter-Base Cutoff Current
V
EB
= -7.0 Vdc
2N6286
2N6287
2N6286
2N6287
2N6286
2N6287
V
(BR)
CEO
-80
-100
-1.0
-1.0
-0.5
-0.5
-2.5
Vdc
I
CEO
mAdc
I
CEX
I
EBO
mAdc
Adc
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
120101
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