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2N5416 参数 Datasheet PDF下载

2N5416图片预览
型号: 2N5416
PDF下载: 下载PDF文件 查看货源
内容描述: PNP小功率硅晶体管 [PNP LOW POWER SILICON TRANSISTOR]
分类和应用: 晶体晶体管
文件页数/大小: 2 页 / 61 K
品牌: MICROSEMI [ MICROSEMI CORPORATION ]
 浏览型号2N5416的Datasheet PDF文件第1页  
2N5415, 2N5416 JAN, SERIES
ELECTRICAL CHARACTERISTICS (con’t)
Characteristics
Symbol
Min.
Max.
Unit
ON CHARACTERISTICS
(3)
Forward-Current Transfer Ratio
I
C
= 50 mAdc, V
CE
= 10 Vdc
I
C
= 1.0 mAdc, V
CE
= 10 Vdc
Collector-Emitter Saturation Voltage
I
C
= 50 mAdc, I
B
= 5.0 mAdc
Base-Emitter Voltage
I
C
= 50 mAdc, V
CE
= 10 Vdc
h
FE
V
CE(sat)
V
BE
Forward
30
15
120
2.0
1.5
Vdc
Vdc
DYNAMIC CHARACTERISTICS
Magnitude of Common Emitter Small-Signal Short Circuit
Current Transfer Ratio
I
C
= 10 mAdc, V
CE
= 10 Vdc, f = 5.0 MHz
Forward Current Transfer Ratio
I
C
= 5.0 mAdc, V
CE
= 10 Vdc, f = 1.0 kHz
Output Capacitance
V
CB
= 10 Vdc, I
E
= 0, 100 kHz
f
1.0 MHz
Input Capacitance
V
EB
= 5.0 Vdc, I
C
= 0, 100 kHz
f
1.0 MHz
h
fe
h
fe
C
obo
C
ibo
3.0
25
15
15
75
pF
pF
SWITCHING CHARACTERISTICS
Turn-On Time
V
CC
=200 Vdc, I
C
= 50 mAdc, I
B1
= 5.0 mAdc
Turn-Off Time
V
CC
= 200 Vdc, I
C
= 50 mAdc, I
B1
= I
B2
= 5.0 mAdc
t
on
1.0
10
µs
µs
t
off
SAFE OPERATING AREA
DC Tests
T
C
= +25
0
C; 1 Cycle; t = 0.4 s
Test 1
V
CE
= 10 Vdc, I
C
= 1.0 Adc
Test 2
V
CE
= 100 Vdc, I
C
= 100 mAdc
Test 3
V
CE
= 200 Vdc, I
C
= 24 mAdc
2N5415
Test 4
V
CE
= 300 Vdc, I
C
= 10 mAdc
2N5416
(3) Pulse Test: Pulse Width = 300µs, Duty Cycle
2.0%.
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
120101
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