TECHNICAL DATA
P-CHANNEL J-FET
Qualified per MIL-PRF-19500/476
Devices
Qualified
Level
2N5115
2N5116
JAN
JANTX
JANTXV
2N5114
ABSOLUTE MAXIMUM RATINGS
(T
C
=+25
0
C unless otherwise noted)
Parameters / Test Conditions
Symbol
All Devices
(1)
Unit
Gate-Source Voltage
V
GS
30
Vdc
(1)
Drain-Source Voltage
V
DS
30
Vdc
Drain-Gate Voltage
V
DG
30
Vdc
Gate Current
I
G
50
mAdc
0 (2)
Power Dissipation
T
A
= +25 C
P
T
0.500
W
0
Storage Temperature Range
T
stg
-65 to +200
C
(1) Symmetrical geometry allows operation of those units with source/drain leads interchanged.
(2) Derate linearly 3.0 mW/
0
C for T
A
> 25
0
C.
TO-18*
(TO-206AA)
*See appendix A for
package outline
ELECTRICAL CHARACTERISTICS
(T
C
= +25
0
C unless otherwise noted)
Parameters / Test Conditions
Symbol
Gate-Source Breakdown Voltage
V
DS
= 0, I
G
= 1.0
µAdc
Drain-Source “On” State Voltage
V
GS
= 0 Vdc, I
D
= -15 mAdc
V
GS
= 0 Vdc, I
D
= -7.0 mAdc
V
GS
= 0 Vdc, I
D
= -3.0 mAdc
Gate Reverse Current
V
DS
= 0, V
GS
= 20 Vdc
Drain Current Cutoff
V
GS
= 12 Vdc, V
DS
= -15 Vdc
V
GS
= 7.0 Vdc, V
DS
= -15 Vdc
V
GS
= 5.0 Vdc, V
DS
= -15 Vdc
V
(BR)GSS
2N5114
2N5115
2N5116
Min.
30
Max.
Units
Vdc
V
DS(on)
1.3
0.8
0.6
500
-500
-500
-500
Vdc
I
GSS
2N5114
2N5115
2N5116
pAdc
pAdc
pAdc
pAdc
I
D(off)
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
120101
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