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2N3866A 参数 Datasheet PDF下载

2N3866A图片预览
型号: 2N3866A
PDF下载: 下载PDF文件 查看货源
内容描述: 射频与微波离散小功率三极管 [RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS]
分类和应用: 晶体小信号双极晶体管射频小信号双极晶体管微波
文件页数/大小: 6 页 / 147 K
品牌: MICROSEMI [ MICROSEMI CORPORATION ]
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MRF581
MRF581G
MRF581A
MRF581AG
*G Denotes RoHS Compliant, Pb free Terminal Finish
RF & MICROWAVE DISCRETE
LOW POWER TRANSISTORS
Features
Low Noise - 2.5 dB @ 500 MHZ
Gain at Optimum Noise Figure = 15.5 dB @ 500 MHz
Ftau - 5.0 GHz @ 10v, 75mA
Cost Effective MacroX Package
Macro X
DESCRIPTION:
Designed for high current, low power, low noise, amplifiers up to 1.0 GHz.
ABSOLUTE MAXIMUM RATINGS
(Tcase = 25
°
C)
Symbol
V
CEO
V
CBO
V
EBO
I
C
Parameter
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
MRF581
18
30
2.5
200
MRF581A
15
Unit
Vdc
Vdc
Vdc
mA
Thermal Data
P
P
D
D
Total Device Dissipation @ TC = 50ºC
Derate above 50ºC
Total Device Dissipation @ TC = 25ºC
Derate above 25ºC
Storage Junction Temperature Range
-65 to +150
Maximum Junction Temperature
150
ºC
ºC
2.5
25
1.25
10
Watts
mW/ ºC
Watts
mW/ ºC
Tstg
T
Jmax
Revision A- December 2008
Microsemi reserves the right to change, without notice, the specifications and information contained herein
Visit our website at www.microsemi.com or contact our factory direct.