2N3501
Electrical Parameters (T
A
@ 25°C unless otherwise specified)
°
CHARACTERISTICS
Off Characteristics
Collector-Emitter Breakdown Voltage(1)
(I
C
= 10 mAdc, I
B
= 0)
Collector-Base Breakdown Voltage
(I
C
= 10
µAdc,
I
E
= 0)
Emitter-Base Breakdown Voltage
(I
E
= 10
µAdc,
I
C
= 0)
Collector Cutoff Current
(V
CB
= 75 Vdc, I
E
= 0)
o
(V
CB
= 75 Vdc, I
E
= 0, T
A
= 150 C)
Emitter Cutoff Current
(V
EB(off)
= 4.0 Vdc, I
C
= 0)
D.C. Current Gain
(I
C
= 0.1 mAdc, V
CE
= 10 Vdc)
(I
C
= 1.0 mAdc, V
CE
= 10 Vdc)
(I
C
= 10 mAdc, V
CE
= 10 Vdc)(1)
(I
C
= 150 mAdc, V
CE
= 10 Vdc)(1)
(I
c
= 150 mAdc, V
CE = 10Vdc) @ 55C
(I
C
= 300 mAdc, V
CE
= 10 Vdc)(1)
Collector-Emitter Saturation Voltage(1)
(I
C
= 10 mAdc, I
B
= 1.0 mAdc)
(I
C
= 150 mAdc, I
B
= 15 mAdc)
Base-Emitter Saturation Voltage(1)
(I
C
= 10 mAdc, I
B
= 1.0 mAdc)
(I
C
= 150 mAdc, I
B
= 15 mAdc)
Magnitude of common emitter small-signal short-circuit forward current
transfer ratio
(V
CE
= 20 Vdc, I
C
= 20 mAdc, f = 100 MHz)
Output Capacitance
(V
CB
= 10 Vdc, I
E
= 0, 100kHz < f < 1MHz)
Input Capacitance
(V
EB
= 0.5 Vdc, I
C
= 0, 100kHz < f < 100MHz)
Small -signal Current Gain
(I
c
= 10mAdc, V
CE
= 10Vdc, f = 1.0 kHz)
Noise figure
(V
CE
= 10Vdc
,
I
C
= 0.5mAdc; R
g
= 1kohms, f = 1MHz)
Noise figure
( V
CE
= 10Vdc, I
C
= 0.5mAdc; R
g
= 1kohms, f = 1MHz)
Turn - on time
( V
EB
= 12Vdc, I
C
= 150mAdc, I
B1
= 15mAdc)
Turn - off time
( I
C
= 150mAdc, I
B1
= I
B2
= -15mAdc)
SYMBOL
BV
CEO
150
BV
CBO
150
BV
EBO
6.0
I
CBO
--
--
I
EBO
--
h
FE
35
50
75
100
45
20
V
CE(Sat)
--
--
V
BE(Sat)
--
--
/h
fe
/
1.5
--
--
--
0.8
1.2
8
--
pf
--
C
IBO
--
h
fe
75
NF
NF
t
on
t
off
--
300
16
6
115
1150
dB
dB
nS
nS
--
80
--
8.0
pf
--
--
0.2
0.4
Vdc
--
--
--
--
--
--
--
--
--
300
--
--
Vdc
--
25
--
--
--
0.05
50
nAdc
--
--
µAdc
--
--
Vdc
--
--
Vdc
MIN.
TYP.
MAX.
UNIT
Vdc
C
OBO
(1)
Pulse Test: Pulse Width
≤
300 ms, Duty Cycle
≤
2.0%
Datasheet# MSC0282A 5/19/97
MICROSEMI [ MICROSEMI CORPORATION ]
