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2N3440 参数 Datasheet PDF下载

2N3440图片预览
型号: 2N3440
PDF下载: 下载PDF文件 查看货源
内容描述: NPN小功率硅晶体管 [NPN LOW POWER SILICON TRANSISTOR]
分类和应用: 晶体小信号双极晶体管
文件页数/大小: 3 页 / 65 K
品牌: MICROSEMI [ MICROSEMI CORPORATION ]
 浏览型号2N3440的Datasheet PDF文件第1页浏览型号2N3440的Datasheet PDF文件第3页  
2N3439, L, 2N3440, L, JAN SERIES
ELECTRICAL CHARACTERISTICS (con’t)
Characteristics
Symbol
I
CEX
Min.
Max.
Unit
µAdc
µAdc
OFF CHARACTERISTICS (con’t)
Collector-Emitter Cutoff Current
V
CE
= 450 Vdc, V
BE
= -1.5 Vdc
V
CE
= 300 Vdc, V
BE
= -1.5 Vdc
Collector-Base Cutoff Current
V
CB
= 360 Vdc
V
CB
= 250 Vdc
V
CB
= 450 Vdc
V
CB
= 300 Vdc
2N3439
2N3440
2N3439
2N3440
2N3439
2N3440
5.0
5.0
2.0
2.0
5.0
5.0
I
CBO
µAdc
ON CHARACTERISTICS
(3)
Forward-Current Transfer Ratio
I
C
= 20 mAdc, V
CE
= 10 Vdc
I
C
= 2.0 mAdc, V
CE
= 10 Vdc
I
C
= 0.2 mAdc, V
CE
= 10 Vdc
Collector-Emitter Saturation Voltage
I
C
= 50 mAdc, I
B
= 4.0 mAdc
Base-Emitter Saturation Voltage
I
C
= 50 mAdc, I
B
= 4.0 mAdc
h
FE
40
30
10
160
V
CE(sat)
V
BE(sat)
0.5
1.3
Vdc
Vdc
DYNAMIC CHARACTERISTICS
Magnitude of Common Emitter Small-Signal Short-Circuit
Forward Current Transfer Ratio
I
C
= 10 mAdc, V
CE
= 10 Vdc, f = 5.0 MHz
Forward Current Transfer Ratio
I
C
= 5.0 mAdc, V
CE
= 10 Vdc, f = 1.0 kHz
Output Capacitance
V
CB
= 10 Vdc, I
E
= 0, 100 kHz
f
1.0 MHz
Input Capacitance
V
EB
= 5.0 Vdc, I
C
= 0, 100 kHz
f
1.0 MHz
h
fe
h
fe
C
obo
C
ibo
3.0
15
25
10
75
pF
pF
SWITCHING CHARACTERISTICS
Turn-On Time
V
CC
= 200 Vdc; I
C
= 20 mAdc, I
B1
=
2.0 mAdc
Turn-Off Time
V
CC
= 200 Vdc; I
C
= 20 mAdc, I
B1
= -
I
B2
=
2.0 mAdc
t
on
1.0
10
µs
µs
t
off
SAFE OPERATING AREA
DC Tests
T
C
= 25
0
C, 1 cycle, t = 1.0 s
Test 1
V
CE
= 5.0 Vdc, I
C
= 1.0 Adc
Both Types
Test 2
V
CE
= 350 Vdc, I
C
= 14 mAdc
2N3439
Test 3
V
CE
= 250 Vdc, I
C
= 20 mAdc
2N3440
(3) Pulse Test: Pulse Width = 300µs, Duty Cycle
2.0%.
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
120101
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