TECHNICAL DATA
NPN SILICON SWITCHING TRANSISTOR
Qualified per MIL-PRF-19500/317
Devices
2N2369A
2N2369AU
2N2369AUA
2N2369AUB
Qualified Level
2N4449
2N4449U
2N4449UA
2N4449UB
JAN
JANTX
JANTXV
MAXIMUM RATINGS
Ratings
Collector-Emitter Voltage
Emitter-Base Voltage
Collector-Base Voltage
Collector-Emitter Voltage
Symbol
V
CEO
V
EBO
V
CBO
V
CES
All UB
20
6.0
All others
15
4.5
Unit
Vdc
Vdc
Vdc
Vdc
W
W
40
40
0
@ T
A
= +25 C @ T
C
= +25
0
C
Total Power Dissipation
2N2369A; 2N4449
0.50
(1)
1.2
(2)
All UA
0.50
(5)
1.2
(2)
P
T
(6)
All UB
0.40
1.4
(7)
All U
0.60
(3)
1.5
(4)
Operating & Storage Junction Temperature Range T
op
,
T
stg
-65 to +200
TO-18* (TO-206AA)
2N2369A
0
C
THERMAL CHARACTERISTICS
Characteristics
Thermal Resistance, Junction-to-Case
2N2369A; 2N4449
All UA
All UB
All U
Thermal Resistance, Ambient-to-Case
2N2369A; 2N4449
All UA
All UB
All U
1) Derate linearly 3.08 mW/
0
C above T
A
= +37.5
0
C
2) Derate linearly 6.85 mW/
0
C above T
C
= +25
0
C
3) Derate linearly 3.44 mW/
0
C above T
A
= +63.5
0
C
4) Derate linearly 8.55 mW/
0
C above T
C
= +63.5
0
C
TO-46 (TO-206AB)
2N4449
Symbol
Max.
146
125
135
117
325
350
437
291
0
Unit
R
θ
JC
C/mW
SURFACE MOUNT
UA*
R
θ
JA
0
C/mW
SURFACE MOUNT
UB*
5) Derate linearly 2.86 mW/
0
C above T
C
= +63.5
0
C
6) Derate linearly 2.29 mW/
0
C above T
C
= +63.5
0
C
7) Derate linearly 8.00 mW/
0
C above T
C
= +63.5
0
C
SURFACE MOUNT
U*
*See appendix A for
package outline
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