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2N1893 参数 Datasheet PDF下载

2N1893图片预览
型号: 2N1893
PDF下载: 下载PDF文件 查看货源
内容描述: NPN小功率硅晶体管 [NPN LOW POWER SILICON TRANSISTOR]
分类和应用: 晶体小信号双极晶体管开关
文件页数/大小: 2 页 / 55 K
品牌: MICROSEMI [ MICROSEMI CORPORATION ]
 浏览型号2N1893的Datasheet PDF文件第2页  
TECHNICAL DATA
NPN LOW POWER SILICON TRANSISTOR
Qualified per MIL-PRF-19500/182
Devices
2N720A
2N1893
2N1893S
Qualified Level
JAN
JANTX
JANTXV
MAXIMUM RATINGS
Ratings
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector-Emitter Voltage (R
BE
= 10
Ω)
Collector Current
@ T
A
= +25
0
C
(1)
@ T
C
= +25
0
C
(2)
Operating & Storage Junction Temperature Range
Total Power Dissipation
Symbol
V
CEO
V
CBO
V
EBO
V
CER
I
C
P
T
T
J
,
T
srg
All Devices
80
120
7.0
100
500
2N720A 2N1893, S
0.5
0.8
1.8
3.0
-65 to +200
Units
Vdc
Vdc
Vdc
Vdc
mAdc
W
0
TO-18 (TO-206AA)*
2N720A
C
THERMAL CHARACTERISTICS
Characteristics
Symbol 2N720A 2N1893, S
Thermal Resistance, Junction-to-Case
97
58
R
θ
JC
1) Derate linearly 2.86 mW/
0
C for 2N720A, 4.57 mW/
0
C for 2N1893, S T
A
> 25
0
C
2) Derate linearly 10.3 mW/
0
C for 2N720A, 17.2 mW/
0
C for 2N1893, S T
C
> 25
0
C
0
Unit
C/W
TO-5*
2N1893, 2N1893S
*See appendix A for package
outline
ELECTRICAL CHARACTERISTICS (T
A
= 25
0
C unless otherwise noted)
Characteristics
Symbol
V
(BR)
CEO
V
(BR)
CER
I
CBO
Min.
Max.
Unit
Vdc
Vdc
10
10
10
10
µAdc
ηAdc
µAdc
ηAdc
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
I
C
= 30 mAdc
Collector-Emitter Breakdown Voltage
I
C
= 10 mAdc, R
BE
= 10
Collector-Base Cutoff Current
V
CB
= 120 Vdc
V
CB
= 90 Vdc
Emitter-Base Cutoff Current
V
EB
= 7.0 Vdc
V
EB
= 5.0 Vdc
80
100
I
EBO
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
120101
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