1N5711, 1N5712, 1N6857, 1N6858
DSB5712
and
DSB2810
INCLUDING -1 VERSIONS
100
IF – FORWARD CURRENT (mA)
IR – REVERSE CURRENT (nA)
0
.2
.4
.6
.8
1.0
1.2
10,000
10
1000
1.0
100
.1
10
.01
1.0
0
5.0
10
15
20
25
30
VF – FORWARD VOLTAGE (V)
Figure 1.
I-V Curve Showing Typical
Forward Voltage Variation with
Temperature for the DSB5712 and
DSB2810 Schottky Diodes.
VR – REVERSE VOLTAGE (V)
(PULSED)
Figure 2.
DSB5712 and DSB2810
Typical Variation of Reverse
Current (IR) vs. Reverse Voltage
(VR) at Various Temperatures.
50
IF – FORWARD CURRENT (mA)
IR – REVERSE CURRENT (nA)
100,000
RD – DYNAMIC RESISTANCE (!!)
0
10
20
30
40
50
60
1000
10
5
10,000
1000
100
1
.5
1
10
.1
.05
10
.01
0
.2
.4
.6
.8
1.0
1.2
1
1
.1
1.0
10
100
VF – FORWARD VOLTAGE (V)
Figure 3.
I-V Curve Showing Typical
Forward Voltage Variation with
Temperature for Schottky Diode
1N5711.
VR – REVERSE VOLTAGE (V)
(PULSED)
Figure 4.
1N5711 Typical
Variation of Reverse Current (IR)
vs. Reverse Voltage (VR) at
Various Temperatures.
IF – FORWARD CURRENT (mA)
(PULSED)
Figure 5.
Typical Dynamic
Resistance (RD) vs. Forward
Current (IF).
64
MICROSEMI [ MICROSEMI CORPORATION ]
