Silicon Switching Diode
Applications
1N4148
or
1N4148-1
DO-35 Glass Package
Used in general purpose applications,where a controlled forward
characteristic and fast switching speed are important.
Features
DO-35 Glass Package
La dDa .
e
i
0. 1 - . 2 "
0 80 0 2
0. 5 - . 5 m m
4 80 5 8
Six sigma quality
Metallurgically bonded
BKC's Sigma Bond™ plating
1.0"
Length
for problem free solderability
25.4 mm
m m
(Min.)
LL-34/35 MELF SMD available
Hermetic Glass Body
Available up to JANTXV-1 levels
"S" level screening available to Source Control Drawings-
0.120-.200"
3.05-5.08-
Dia.
0.06-0.09"
15 - . 8m m
. 322
i
Maximum Ratings
Peak Inverse Voltage @ 5µA & 0.1µA @ -55
o
C
Average Rectified Current
Continuous Forward Current
Peak Surge Current (t
peak
= 1 sec.)
BKC Power Dissipation T
L
=50
o
C, L = 3/8" from body
Operating Temperature Range
Storage Temperature Range
Electrical Characteristics @ 25
o
C*
Forward Voltage Drop @ I
F
= 10 mA
Breakdown Voltage @ I
R
= 5 µA
Breakdown Voltage @ I
R
= 100µA
Symbol
V
F
PIV
PIV
Symbol
PIV
Iavg
I
Fdc
I
peak
P
tot
T
Op
T
St
Minimum
***
75
100
Value
100 (Min).
200
300
1.0
500
-65 to +200
-65 to +200
Maximum
1.00
Unit
Volts
mAmps
mAmps
Amp
mWatts
o
C
o
C
Unit
Volts
Volts
Volts
Reverse Leakage Current @ V
R
= 75 V
Capacitance @ V
R
= 0 V, f = 1mHz
Reverse Recovery time (note 1)
I
R
C
T
t
rr
5 (100 @ 150
o
C)
4.0
4.0
µA
pF
nSecs
Note 1: Per Method 4031-A with I
F
= 10 mA,Vr = 6 V, R
L
= 100 Ohms. * UNLESS OTHERWISE SPECIFIED
6 Lake Street - Lawrence, MA 01841
Tel: 978-681-0392 - Fax: 978-681-9135
MICROSEMI [ MICROSEMI CORPORATION ]
