HAL856
DATA SHEET
Table 5–1: Telegram parameters (All voltages are referenced to GND.)
Symbol
Parameter
Pin No.
Min.
Typ.
Max.
Unit
Conditions
V
Supply Voltage for Low Level
during Programming
1
5
5.5
6
V
DDL
V
Supply Voltage for High Level
during Programming
1
6.8
8.0
8.5
V
DDH
t
t
t
t
Rise Time
Fall Time
1
1
1
3
−
−
0.05
0.05
1.8
4
ms
ms
ms
ms
r
−
−
f
Bit Time on V
1.7
2
1.75
3
t
is defined through the Sync Bit
p0
p0
DD
Bit Time on Output Pin
t
is defined through the
pOUT
pOUT
Acknowledge Bit
t
t
Voltage Change for Logical 1
1, 3
1
50
95
4.9
65
100
5
80
%
ms
V
% of t or t
p1
p0
pOUT
Programming Time for EEPROM
105
5.1
PROG
V
Supply Voltage during
Programming
1
DD,PROG
t
t
t
Rise Time of Charging Pulse
Fall Time of Charging Pulse
1
1
1
0.2
0
0.5
−
1
1
1
ms
ms
ms
rp
fp
w
Delay Time of Charging Pulse
after Acknowledge
0.5
0.7
WRITE
Sync
COM
CP
ADR
AP
DAT
DP
V
DD
I
DD
Fig. 5–2: Telegram for coding a Write command
READ
Sync
COM
CP
ADR
AP
V
DD
Acknowledge
DAT
DP
I
DD
Fig. 5–3: Telegram for coding a Read command
36
March 23, 2010; DSH000142_002EN
Micronas
MICRONAS [ MICRONAS ]
