欢迎访问ic37.com |
会员登录 免费注册
发布采购

HAL856UT-K 参数 Datasheet PDF下载

HAL856UT-K图片预览
型号: HAL856UT-K
PDF下载: 下载PDF文件 查看货源
内容描述: 可编程线性霍尔效应传感器与任意输出特性( 2线) [Programmable Linear Hall-Effect Sensor with Arbitrary Output Characteristic (2-Wire)]
分类和应用: 传感器
文件页数/大小: 42 页 / 954 K
品牌: MICRONAS [ MICRONAS ]
 浏览型号HAL856UT-K的Datasheet PDF文件第20页浏览型号HAL856UT-K的Datasheet PDF文件第21页浏览型号HAL856UT-K的Datasheet PDF文件第22页浏览型号HAL856UT-K的Datasheet PDF文件第23页浏览型号HAL856UT-K的Datasheet PDF文件第25页浏览型号HAL856UT-K的Datasheet PDF文件第26页浏览型号HAL856UT-K的Datasheet PDF文件第27页浏览型号HAL856UT-K的Datasheet PDF文件第28页  
HAL856  
DATA SHEET  
3.6. Characteristics  
at TJ = 40 °C to +170 °C, VDD = 4.5 V to 14 V, after programming and locking of the device,  
at Recommended Operation Conditions if not otherwise specified in the column “Conditions”.  
Typical Characteristics for TJ = 25 °C and VDD = 5 V.  
For all other temperature ranges this table is also valid, but only in the junction temperature range defined by the  
temperature range (Example: For K-Type this table is limited to TJ = 40 °C to +140 °C).  
All voltages listed are referenced to ground (GND).  
Symbol Parameter  
Low Level Sink Current1)  
Pin No. Min.  
Typ.  
Max.  
Unit Conditions  
programmable parameter  
IDD,Low  
1
4.5  
5.5  
6
7
8
9
mA  
mA  
LOW CURRENT = 12  
LOW CURRENT = 4  
IDD,High  
High Level Sink Current1)  
1
programmable parameter  
HIGH CURRENT = 5  
HIGH CURRENT = 4  
HIGH CURRENT = 3  
HIGH CURRENT = 2  
HIGH CURRENT = 1  
HIGH CURRENT = 0  
10.5  
11.0  
11.5  
12.0  
12.5  
13.0  
13.5  
14.0  
14.5  
15.0  
15.5  
16.0  
15.0  
15.5  
16.0  
16.5  
17.0  
17.5  
mA  
mA  
mA  
mA  
mA  
mA  
VDDZ  
Overvoltage Protection at  
Supply  
1
22  
V
2)  
3)  
Resolution  
2,3  
2,3  
12  
bit  
%
INL  
Integral Non-Linearity over  
Temperature Range  
0.5  
0
0.5  
fPWM  
PWM Output Frequency over  
Temperature Range  
3
840  
420  
210  
105  
52  
1000  
500  
250  
125  
62.5  
31  
1080  
540  
270  
135  
68  
Hz  
Hz  
Hz  
Hz  
Hz  
Hz  
Hz  
Hz  
PWM period: 1 ms; 9 bit res.  
PWM period: 2 ms; 10 bit res.  
PWM period: 4 ms; 11 bit res.  
PWM period: 8 ms; 12 bit res.  
PWM period: 16 ms; 12 bit res.  
PWM period: 32 ms; 12 bit res.  
PWM period: 64 ms; 12 bit res.  
PWM period: 128 ms;12 bit res.  
26  
34  
13  
15  
17  
6.5  
7.5  
8.5  
tp0  
Biphase-M Output Bittime  
over Temperature Range  
3
0.03  
2
0.04  
3.2  
0.05  
4
ms  
ms  
Biphase-M bit time: 40 μs  
Biphase-M bit time: 3.2 ms  
tp1  
Biphase-M Output Timing for  
Logical 1  
3
50  
65  
80  
%
fADC  
Internal ADC Frequency over  
Temperature Range  
110  
128  
150  
kHz VDD = 4.5 V to 14 V  
1) Typical values describe the mean value of current consumption over temperature (see Fig. 3–8)  
2) if the Hall IC is programmed suitably  
3) if more than 50% of the selected magnetic field range are used and the Hall IC is programmed  
24  
March 23, 2010; DSH000142_002EN  
Micronas  
 复制成功!