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HAL855UT-K 参数 Datasheet PDF下载

HAL855UT-K图片预览
型号: HAL855UT-K
PDF下载: 下载PDF文件 查看货源
内容描述: 可编程线性霍尔效应传感器与任意输出特性 [Programmable Linear Hall-Effect Sensor with Arbitrary Output Characteristic]
分类和应用: 传感器换能器
文件页数/大小: 42 页 / 2158 K
品牌: MICRONAS [ MICRONAS ]
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HAL855  
DATA SHEET  
5.6. Programming Information  
If the content of any register is to be changed, the  
desired value must first be written into the correspond-  
ing RAM register. Before reading out the RAM register  
again, the register value must be permanently stored  
in the EEPROM.  
Permanently storing a value in the EEPROM is done  
by first sending an ERASE command followed by  
sending a PROM command and a read command. The  
address within the ERASE and PROM commands is  
not important. ERASE and PROM act on all registers  
in parallel.  
If all HAL855 registers are to be changed, all writing  
commands can be sent one after the other, followed by  
sending one ERASE and PROM command at the end.  
During all communication sequences, the customer  
has to check if the communication with the sensor was  
successful. This means that the acknowledge and the  
parity bits sent by the sensor have to be checked by  
the customer. If the Micronas programmer board is  
used, the customer has to check the error flags sent  
from the programmer board. It is recommended to use  
the programmer board version 5.1.  
Further information for the programming of the sensor  
can be found in the application note for the program-  
mer board.  
Note: For production and qualification tests, it is man-  
datory to set the LOCK bit after final adjustment  
and programming of HAL855. The LOCK func-  
tion is active after the next power-up of the sen-  
sor.  
The success of the LOCK process should be  
checked by reading at least one sensor register  
after locking and/or by an analog check of the  
sensors output signal.  
Electrostatic Discharges (ESD) may disturb the  
programming pulses. Please take precautions  
against ESD.  
40  
Nov. 26, 2008; DSH000149_003EN  
Micronas