HAL815
ADVANCE INFORMATION
3.7. Magnetic Characteristics
at TJ = −40 °C to +170 °C, VDD = 4.5 V to 5.5 V, after programming, as not otherwise specified in Conditions.
Typical Characteristics for TJ = 25 °C and VDD = 5 V.
Symbol
Parameter
Pin No.
Min.
−1
Typ.
Max.
1
Unit
mT
Test Conditions
B
Magnetic Offset
3
0
B = 0 mT, I
= 0 mA, T = 25 °C
Offset
OUT
OUT
J
∆B
/∆T
Magnetic Offset Change
−15
0
15
µT/K
B = 0 mT, I
= 0 mA
Offset
due to T
J
B
Magnetic Hysteresis
Magnetic Slew Rate
−20
0
20
µT
Range = 30 mT, Filter = 500 Hz
Hysteresis
SR
3
3
−
2
4
12
25
50
−
mT/ms
Filter frequency = 80 Hz
Filter frequency = 160 Hz
Filter frequency = 500 Hz
Filter frequency = 1 kHz
Filter frequency = 2 kHz
n
Magnetic RMS Broadband
Noise
−
10
−
µT
BW = 10 Hz to 2 kHz
B = 0 mT
meff
f
f
Corner Frequency of 1/f Noise
3
3
−
−
20
Hz
Hz
Cflicker
Corner Frequency of 1/frms
Noise
100
B = 65 mT, T = 25 °C
Cflicker
J
3.8. Open-Circuit Detection
at TJ = −40 °C to +170 °C, Typical Characteristics for TJ = 25 °C
Symbol
Parameter
Pin No.
Min.
Typ.
Max.
Unit
Test Conditions
V
Output voltage
3
0
0
0.2
V
V
R
= 5 V
DD
OUT
OUT
at open V line
= 10 kΩ to GND
DD
L
V
Output voltage at
open GND line
3
4.7
4.8
5
V
V
R
= 5 V
DD
= 10 kΩ to GND
L
3.9. Overvoltage and Undervoltage Detection
at TJ = −40 °C to +170 °C, Typical Characteristics for TJ = 25 °C
Symbol
Parameter
Pin No.
Min.
3.5
Typ.
3.8
Max.
4.1
Unit
V
Test Conditions
1)
V
V
Undervoltage detection level
Overvoltage detection level
1
1
DD,UV
DD,OV
1)
8.5
9.2
10.0
V
1)
If the supply voltage drops below V
or rises above V
, the output voltage is switched to V (≥94% of V at R = 10 kΩ to GND).
DD,OV DD DD L
DD,UV
14
Micronas
MICRONAS [ MICRONAS ]
