HAL815
ADVANCE INFORMATION
4.4. Undervoltage Behavior
Temperature
TC
TCSQ
Coefficient of
Magnet (ppm/K)
In a voltage range below 4.5 V to approximately 3.5 V,
the operation of the HAL 815 is typically given and pre-
dictable for the most sensors. Some of the parameters
may be out of the specification. Below about 3.5 V, the
digital processing is reset. If the supply voltage once
again rises above about 3.5 V, a startup time of about
20 µs elapses for the digital processing to occur. As
long as the supply voltage is still above about 2.8 V,
the analog output is kept at its last valid value ratiomet-
ric to VDD. Below about 2.5 V, the entire sensor will
reset.
−810
−860
0
15
16
16
16
17
17
17
18
18
19
19
20
20
20
21
21
22
22
23
23
24
24
25
26
27
27
28
28
29
30
31
−1
−910
−2
−960
−3
−1020
−1070
−1120
−1180
−1250
−1320
−1380
−1430
−1500
−1570
−1640
−1710
−1780
−1870
−1950
−2030
−2100
−2180
−2270
−2420
−2500
−2600
−2700
−2800
−2900
−3000
−3100
−4
−5
−6
4.5. Ambient Temperature
−7
Due to the internal power dissipation, the temperature
on the silicon chip (junction temperature TJ) is higher
than the temperature outside the package (ambient
temperature TA).
−8
−9
−10
−11
−12
−13
−14
−15
−16
−17
−18
−19
−20
−21
−22
−24
−25
−26
−27
−28
−29
−30
−31
TJ = TA + ∆T
At static conditions, the following equation is valid:
∆T = IDD * VDD * RthJA
For typical values, use the typical parameters. For
worst case calculation, use the max. parameters for
IDD and Rth, and the max. value for VDD from the appli-
cation.
For VDD = 5.5 V, Rth = 200 K/W and IDD = 10 mA the
temperature difference ∆T = 11 K.
For all sensors, the junction temperature TJ is speci-
fied. The maximum ambient temperature TAmax can be
calculated as:
TAmax = TJmax −∆T
4.6. EMC and ESD
The HAL 815 is designed for a stabilized 5 V supply.
Interferences and disturbances conducted along the
12 V onboard system (product standards DIN40839
part 1 or ISO 7637 part 1) are not relevant for these
applications.
For applications with disturbances by capacitive or
inductive coupling on the supply line or radiated distur-
bances, the application circuit shown in Fig. 4–1 is rec-
ommended. Applications with this arrangement
passed the EMC tests according to the product stan-
dards DIN 40839 part 3 (Electrical transient transmis-
sion by capacitive or inductive coupling) and part 4
(Radiated disturbances).
Please contact Micronas for the detailed investigation
reports with the EMC and ESD results.
18
Micronas
MICRONAS [ MICRONAS ]
