HAL700, HAL740
DATA SHEET
3.6. Characteristics
at TJ = −40 °C to +140 °C, VDD = 3.8 V to 24 V, GND = 0 V.
at Recommended Operation Conditions if not otherwise specified in the column “Conditions”.
Typical Characteristics for TJ = 25 °C and VDD = 5 V.
Symbol
Parameter
Pin No.
Min.
Typ.
5.5
7
Max.
9
Unit
mA
Test Conditions
T = 25 °C
I
Supply Current
1
1
3
2
DD
DD
J
I
Supply Current
10
mA
over Temperature Range
V
V
Overvoltage Protection
at Supply
1
−
−
28.5
28
32
32
V
V
I
= 25 mA, T = 25 °C, t = 2 ms
DD J
DDZ
OZ
Overvoltage Protection
at Output
2, 3
I
= 20 mA, T = 25 °C, t = 15 ms
J
O
V
V
Output Voltage
2, 3
2, 3
−
−
130
130
280
400
mV
mV
I
I
= 10 mA, T = 25 °C
OL
OL
J
Output Voltage over
Temperature Range
= 10 mA
OL
OL
I
I
f
t
Output Leakage Current
2, 3
2, 3
−
−
0.06
−
0.1
10
−
μA
μA
kHz
μs
Output switched off, T = 25 °C,
J
OH
V
= 3.8 V to 24 V
OH
Output Leakage Current over
Temperature Range
−
Output switched off, T ≤ 140 °C,
J
OH
osc
V
= 3.8 V to 24 V
OH
Internal Sampling Frequency over
Temperature Range
100
−
150
50
1
(O)
Enable Time of Output after
−
V
= 12 V,
en
DD
Setting of V
B>B + 2 mT or B<B − 2 mT
DD
on off
t
t
Output Rise Time
Output FallTime
2, 3
2, 3
−
−
−
−
0.2
0.2
150
−
μs
V
V
= 12 V, R = 2.4 kΩ, C = 20 pF
L L
r
DD
−
μs
= 12 V, R = 2.4 kΩ, C = 20 pF
f
DD
L
L
R
case
SOT89B-2
Thermal Resistance Junction
to Substrate Backside
200
K/W
Fiberglass Substrate
30 mm x 10 mm x 1.5 mm,
pad size see Fig. 3–2
thJSB
1.80
1.05
1.45
2.90
1.05
0.50
1.50
Fig. 3–2: Recommended pad size SOT89B-2
Dimensions in mm
12
Nov. 30, 2009; DSH000029_002EN
Micronas
MICRONAS [ MICRONAS ]
