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HAL710SF-E 参数 Datasheet PDF下载

HAL710SF-E图片预览
型号: HAL710SF-E
PDF下载: 下载PDF文件 查看货源
内容描述: 霍尔效应传感器与检测方向 [Hall-Effect Sensors with Direction Detection]
分类和应用: 传感器换能器
文件页数/大小: 19 页 / 1007 K
品牌: MICRONAS [ MICRONAS ]
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HAL 710, HAL 730  
DATA SHEET  
5.5. EMC and ESD  
For applications that cause disturbances on the supply  
line or radiated disturbances, a series resistor and a  
capacitor are recommended (see Fig. 5–1). The series  
resistor and the capacitor should be placed as closely  
as possible to the Hall sensor.  
Please contact Micronas for detailed investigation  
reports with EMC and ESD results.  
R
V
220 Ω  
R
R
L
2.4 kΩ  
2.4 kΩ  
V
1
L
DD  
3 S1-Output  
2 S2-Output  
V
V
EMC  
P
4.7 nF  
20 pF  
20 pF  
4
GND  
Fig. 5–1: Test circuit for EMC investigations  
5.6. Start-up Behavior  
Due to the active offset compensation, the sensors  
have an initialization time (enable time ten(O)) after  
applying the supply voltage. The parameter ten(O) is  
specified in the “Characteristics” (see Section 3.6. on  
page 11).  
During the initialization time, the output states are not  
defined and the outputs can toggle. After ten(O), both  
outputs will be either high or low for a stable magnetic  
field (no toggling) and the Count Output will be low if  
the applied magnetic field B exceeds BON. The Count  
Output will be high if B drops below BOFF. The Direc-  
tion Output will have the correct state after the second  
edge (rising or falling) in the same direction.  
The device contains a Power-On Reset circuit (POR)  
generating a reset when VDD rises. This signal is used  
to disable Test Mode. The generation of this reset sig-  
nal is guaranteed when VDD at the chip rises to a mini-  
mum 3.8 V in less than 4 µs monotonically. If this con-  
dition is violated, the internal reset signal might be  
missing. Under these circumstances, the chip will still  
operate according to the specification, but the risk of  
toggling outputs during ten(O) increases; and for mag-  
netic fields between BOFF and BON, the output states  
of the Hall sensor after applying VDD will be either low  
or high. In order to achieve a well-defined output state,  
the applied magnetic field then must exceed BONmax  
respectively, drop below BOFFmin  
,
.
18  
Oct. 13, 2009; DSH000031_002EN  
Micronas