DATA SHEET
HAL 710, HAL 730
3.6. Characteristics
at TJ = −40 °C to +140 °C, VDD = 3.8 V to 24V, GND = 0 V
at Recommended Operation Conditions if not otherwise specified in the column “Conditions”.
Typical Characteristics for TJ = 25 °C and VDD = 5 V.
Symbol
IDD
Parameter
Pin No.
Min.
Typ.
5.5
7
Max.
9
Unit
mA
Test Conditions
Supply Current
1
1
3
2
T = 25 °C
J
Supply Current
over Temperature Range
10
mA
IDD
Overvoltage Protection
at Supply
1
−
−
28.5
28
32
32
V
V
I
I
= 25 mA, T = 25 °C, t = 2 ms
VDDZ
VOZ
DD
J
Overvoltage Protection
at Output
2,3
= 20 mA, T = 25 °C, t = 15 ms
OL
J
Output Voltage
2,3
2,3
−
−
130
130
280
400
mV
mV
I
I
= 10 mA, T = 25 °C
VOL
VOL
OL
J
Output Voltage over
Temperature Range
= 10 mA,
OL
Output Leakage Current
2,3
2,3
−
−
0.06
−
0.1
10
−
μA
μA
kHz
μs
Output switched off, T = 25 °C,
J
IOH
IOH
fosc
ten(O)
tr
V
= 3.8 V to 24 V
OH
Output Leakage Current over
Temperature Range
−
Output switched off, T ≤ 140 °C,
J
V
= 3.8 V to 24 V
OH
Internal Sampling Frequency
over Temperature Range
100
−
150
50
Enable Time of Output after
1
−
V
= 12 V,
DD
Setting of V
B>B + 2 mT or B<B − 2 mT
DD
on off
Output Rise Time
Output FallTime
2,3
2,3
−
−
0.2
0.2
150
−
μs
V
= 12 V, R = 2.4 kΩ, C =
DD L L
20 pF
−
−
μs
V
DD
= 12 V, R = 2.4 kΩ, C =
tf
L
L
20 pF
Thermal Resistance Junction to
Substrate Backside
−
200
K/W
Fiberglass Substrate
30 mm x 10 mm x 1.5 mm,
pad size
RthSB
case
SOT89B-2
1.80
1.05
1.45
2.90
1.05
0.50
1.50
Fig. 3–2: Recommended pad size SOT89B-2
Dimensions in mm
Micronas
Oct. 13, 2009; DSH000031_002EN
11
MICRONAS [ MICRONAS ]
