HAL700
3.6. Electrical Characteristics
at T
J
=
−40
°C to +140 °C, V
DD
= 3.8 V to 24 V, as not otherwise specified in Conditions.
Typical Characteristics for T
J
= 25 °C and V
DD
= 5 V.
Symbol
I
DD
I
DD
V
DDZ
V
OZ
V
OL
V
OL
Parameter
Supply Current
Supply Current
over Temperature Range
Overvoltage Protection
at Supply
Overvoltage Protection
at Output
Output Voltage
Output Voltage over
Temperature Range
I
OH
I
OH
Output Leakage Current
2, 3
0.06
−
0.1
µA
µA
Pin No.
1
1
Min.
2
Typ.
5.5
7
Max.
9
10
Unit
mA
mA
ADVANCE INFORMATION
Conditions
T
J
= 25 °C
1
28.5
32
V
I
DD
= 25 mA, T
J
= 25 °C, t = 20 ms
I
OH
= 25 mA, T
J
= 25 °C, t = 20 ms
I
OL
= 10 mA, T
J
= 25 °C
I
OL
= 10 mA,
2, 3
28
32
V
2, 3
2, 3
130
130
280
400
mV
mV
Output switched off, T
J
= 25 °C,
V
OH
= 3.8 V to 24 V
Output switched off, T
J
≤
140 °C,
V
OH
= 3.8 V to 24 V
T
J
= 25 °C
Output Leakage Current over
Temperature Range
2, 3
10
f
osc
f
osc
t
en
(O)
Internal sampling frequency
Internal sampling frequency
over Temperature Range
Enable Time of Output after
Setting of V
DD
Output Rise Time
Output FallTime
Thermal Resistance Junction to
Substrate Backside
−
−
130
100
150
150
−
−
kHz
kHz
µs
50
100
V
DD
= 12 V,
B>B
on
+ 2 mT or B<B
off
−
2 mT
t
r
t
f
R
thSB
SOT-89B
2, 3
2, 3
−
−
1.2
0.2
150
1.6
200
µs
µs
K/W
V
DD
= 12 V, R
L
= 20 kΩ, C
L
= 20 pF
V
DD
= 12 V, R
L
= 20 kΩ, C
L
= 20 pF
Fiberglass Substrate
30 mm x 10mm x 1.5mm,
pad size see Fig. 3–2
5.0
2.0
2.0
1.0
Fig. 3–2:
Recommended pad sizes for SOT-89B
Dimensions in mm
8
Micronas
MICRONAS [ MICRONAS ]
