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HAL581UA-E 参数 Datasheet PDF下载

HAL581UA-E图片预览
型号: HAL581UA-E
PDF下载: 下载PDF文件 查看货源
内容描述: 双线霍尔效应传感器系列 [Two-Wire Hall-Effect Sensor Family]
分类和应用: 传感器换能器
文件页数/大小: 36 页 / 1722 K
品牌: MICRONAS [ MICRONAS ]
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DATA SHEET  
HAL57x, HAL58x  
Unipolar Inverted Switching Sensors:  
1.3. Marking Code  
The sensor turns to low current consumption with the  
magnetic south pole on the branded side of the pack-  
age and turns to high consumption if the magnetic field  
is removed. The sensor does not respond to the mag-  
netic north pole on the branded side.  
All Hall sensors have a marking on the package sur-  
face (branded side). This marking includes the name  
of the sensor and the temperature range.  
Type  
Temperature Range  
Current consumption  
K
E
IDDhigh  
HAL573  
HAL574  
HAL575  
HAL576  
HAL579  
HAL581  
HAL584  
573K  
574K  
575K  
576K  
579K  
581K  
584K  
573E  
574E  
575E  
576E  
579E  
581E  
584E  
BHYS  
IDDlow  
0
BON  
BOFF  
B
Fig. 1–2: Unipolar Inverted Switching Sensor  
Latching Sensor:  
The sensor turns to high current consumption with the  
magnetic south pole on the branded side of the pack-  
age and turns to low consumption with the magnetic  
north pole on the branded side. The current consump-  
tion does not change if the magnetic field is removed.  
For changing the current consumption, the opposite  
magnetic field polarity must be applied.  
1.4. Operating Junction Temperature Range (TJ)  
The Hall sensors from Micronas are specified to the  
chip temperature (junction temperature TJ).  
K: TJ = 40 °C to +140 °C  
E: TJ = 40 °C to +100 °C  
Current consumption  
IDDhigh  
Note: Due to the high power dissipation at high current  
consumption, there is a difference between the  
ambient temperature (TA) and junction tempera-  
ture. Please refer to Section 5.4. on page 34 for  
details.  
BHYS  
IDDlow  
B
0
BOFF  
BON  
Fig. 1–3: Latching Sensor  
Micronas  
Dec. 22, 2008; DSH000145_003EN  
5
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