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HAL581UA-E 参数 Datasheet PDF下载

HAL581UA-E图片预览
型号: HAL581UA-E
PDF下载: 下载PDF文件 查看货源
内容描述: 双线霍尔效应传感器系列 [Two-Wire Hall-Effect Sensor Family]
分类和应用: 传感器换能器
文件页数/大小: 36 页 / 1722 K
品牌: MICRONAS [ MICRONAS ]
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DATA SHEET  
HAL579  
4.5. HAL579  
Applications  
The HAL579 is a unipolar switching sensor with low  
sensitivity (see Fig. 4–17).  
The HAL579 is designed for applications with both  
magnetic polarities and weak magnetic amplitudes at  
the sensor position such as:  
The sensor turns to high current consumption with the  
magnetic south pole on the branded side of the pack-  
age and turns to low consumption with the magnetic  
north pole on the branded side. The current consump-  
tion does not change if the magnetic field is removed.  
For changing the current consumption, the opposite  
magnetic field polarity must be applied.  
– solid state switches,  
– contactless solutions to replace micro switches,  
– position and end point detection, and  
– rotating speed measurement.  
For correct functioning in the application, the sensor  
requires both magnetic polarities on the branded side  
of the package.  
Current consumption  
IDDhigh  
BHYS  
Magnetic Features:  
– switching type: latching  
IDDlow  
– medium sensitivity  
B
BOFF  
0
BON  
– typical BON: 12.0 mT at room temperature  
– typical BOFF: -12.0 mT at room temperature  
Fig. 4–17: Definition of magnetic switching points for  
the HAL579  
– typical temperature coefficient of magnetic switching  
points is 0 ppm/K  
– operates with static magnetic fields and dynamic  
magnetic fields up to 10 kHz  
Magnetic Characteristics at TJ = 40 °C to +140 °C, VDD = 3.75 V to 24 V,  
Typical Characteristics for VDD = 12 V  
Magnetic flux density values of switching points.  
Positive flux density values refer to the magnetic south pole at the branded side of the package.  
Parameter  
On point B  
Typ.  
Off point B  
Typ.  
Hysteresis B  
HYS  
Magnetic Offset  
Unit  
ON  
OFF  
T
Min.  
5.5  
5.5  
5.5  
5.5  
Max.  
18.5  
18.5  
18.5  
18.5  
Min.  
Max.  
Min.  
Typ.  
22.0  
22.0  
22.0  
22.0  
Max.  
Min.  
Typ.  
0.0  
0.0  
0.0  
0.0  
Max.  
J
40 °C  
25 °C  
12.0  
18.5  
18.5  
18.5  
18.5  
12.0  
12.0  
12.0  
12.0  
5.5  
5.5  
5.5  
5.5  
16.0  
16.0  
16.0  
16.0  
28.0  
28.0  
28.0  
28.0  
7.0  
7.0  
7.0  
7.0  
7.0  
7.0  
7.0  
7.0  
mT  
mT  
mT  
mT  
12.0  
12.0  
100 °C  
140 °C  
12.0  
The hysteresis is the difference between the switching points BHYS = BON BOFF  
The magnetic offset is the mean value of the switching points BOFFSET = (BON + BOFF) / 2  
Micronas  
Dec. 22, 2008; DSH000145_003EN  
27  
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