DATA SHEET
HAL579
4.5. HAL579
Applications
The HAL579 is a unipolar switching sensor with low
sensitivity (see Fig. 4–17).
The HAL579 is designed for applications with both
magnetic polarities and weak magnetic amplitudes at
the sensor position such as:
The sensor turns to high current consumption with the
magnetic south pole on the branded side of the pack-
age and turns to low consumption with the magnetic
north pole on the branded side. The current consump-
tion does not change if the magnetic field is removed.
For changing the current consumption, the opposite
magnetic field polarity must be applied.
– solid state switches,
– contactless solutions to replace micro switches,
– position and end point detection, and
– rotating speed measurement.
For correct functioning in the application, the sensor
requires both magnetic polarities on the branded side
of the package.
Current consumption
IDDhigh
BHYS
Magnetic Features:
– switching type: latching
IDDlow
– medium sensitivity
B
BOFF
0
BON
– typical BON: 12.0 mT at room temperature
– typical BOFF: -12.0 mT at room temperature
Fig. 4–17: Definition of magnetic switching points for
the HAL579
– typical temperature coefficient of magnetic switching
points is 0 ppm/K
– operates with static magnetic fields and dynamic
magnetic fields up to 10 kHz
Magnetic Characteristics at TJ = −40 °C to +140 °C, VDD = 3.75 V to 24 V,
Typical Characteristics for VDD = 12 V
Magnetic flux density values of switching points.
Positive flux density values refer to the magnetic south pole at the branded side of the package.
Parameter
On point B
Typ.
Off point B
Typ.
Hysteresis B
HYS
Magnetic Offset
Unit
ON
OFF
T
Min.
5.5
5.5
5.5
5.5
Max.
18.5
18.5
18.5
18.5
Min.
Max.
Min.
Typ.
22.0
22.0
22.0
22.0
Max.
Min.
Typ.
0.0
0.0
0.0
0.0
Max.
J
−40 °C
25 °C
12.0
−18.5
−18.5
−18.5
−18.5
−12.0
−12.0
−12.0
−12.0
−5.5
−5.5
−5.5
−5.5
16.0
16.0
16.0
16.0
28.0
28.0
28.0
28.0
−7.0
−7.0
−7.0
−7.0
7.0
7.0
7.0
7.0
mT
mT
mT
mT
12.0
12.0
100 °C
140 °C
12.0
The hysteresis is the difference between the switching points BHYS = BON − BOFF
The magnetic offset is the mean value of the switching points BOFFSET = (BON + BOFF) / 2
Micronas
Dec. 22, 2008; DSH000145_003EN
27
MICRONAS [ MICRONAS ]
