DATA SHEET
HAL57x, HAL58x
3.6. Characteristics
at TJ = −40 °C to +140 °C, VDD = 3.75 V to 24 V
at Recommended Operation Conditions if not otherwise specified in the column “Conditions”.
Typical Characteristics for TJ = 25 °C and VDD = 12 V.
Symbol
Parameter
Pin No.
Min.
5
Typ.
6
Max.
6.9
6.9
17
Unit
mA
mA
mA
Test Conditions
I
Low Current Consumption
over Temperature Range
1
DDlow
4.5
12
6
for HAL579 only
High Current Consumption
over Temperature Range
I
1
1
14.3
DDhigh
I
= 25 mA, T = 25 °C,
J
V
Overvoltage Protection
at Supply
−
−
28.5
145
32
V
DD
DDZ
t = 20 ms
f
Internal Oscillator Chopper
Frequency over Temperature
Range
−
−
kHz
osc
1)
t
Enable Time of Output after
1
−
30
−
µs
en(O)
Setting of V
DD
V
V
= 12 V, R = 30 Ω
t
t
Output Rise Time
Output Fall Time
1
1
−
−
0.4
0.4
1.6
1.6
µs
µs
DD
s
r
= 12 V, R = 30 Ω
DD
s
f
SOT89B Package
Thermal Resistance
30 mm x 10 mm x 1.5 mm,
pad size (see Fig. 3–6)
2)
R
R
R
Junction to Ambient
Junction to Case
−
−
−
−
−
−
−
−
−
209
K/W
K/W
K/W
thja
thjc
thjs
2)
56
3)
Junction to Solder Point
82
TO92UA Package
Thermal Resistance
2)
R
R
R
Junction to Ambient
Junction to Case
−
−
−
−
−
−
−
−
−
246
K/W
K/W
K/W
thja
thjc
thjs
2)
70
3)
Junction to Solder Point
127
1)
2)
3)
B > B + 2 mT or B < B
Measured with a 1s0p board
Measured with a 1s1p board
− 2 mT for HAL57x, B > B
+ 2 mT or B < B − 2 mT for HAL58x
OFF ON
ON
OFF
1.80
1.05
1.45
2.90
1.05
0.50
1.50
Fig. 3–6: Recommend pad size SOT89B-1
Dimensions in mm
Micronas
Dec. 22, 2008; DSH000145_003EN
15
MICRONAS [ MICRONAS ]
