HAL57x, HAL58x
DATA SHEET
5.4. Ambient Temperature
5.5. EMC and ESD
Due to internal power dissipation, the temperature on
the silicon chip (junction temperature TJ) is higher than
the temperature outside the package (ambient temper-
ature TA).
For applications with disturbances on the supply line or
radiated disturbances, a series resistor and a capacitor
are recommended (see Fig. 5–3). The series resistor
and the capacitor should be placed as closely as pos-
sible to the HAL sensor.
TJ = TA + ΔT
Applications with this arrangement passed the EMC
tests according to the product standards ISO 7637.
Please contact Micronas for detailed information and
first EMC and ESD results.
At static conditions and continuous operation, the fol-
lowing equation applies:
R
R
V2
V1
ΔT = IDD × VDD × Rth
100 Ω
30 Ω
For all sensors, the junction temperature range TJ is
specified. The maximum ambient temperature TAmax
can be calculated as:
1
V
DD
V
EMC
4.7 nF
TAmax = TJmax – ΔT
2, x GND
For typical values, use the typical parameters. For
worst case calculation, use the max. parameters for
IDD and Rth, and the max. value for VDD from the appli-
cation.
x = pin 3 for TO92UA-1/-2 package
x = pin 4 for SOT89B-1 package
Due to the range of IDDhigh, self-heating can be critical.
The junction temperature can be reduced with pulsed
supply voltage. For supply times (ton) ranging from 30
μs to 1 ms, the following equation can be used:
Fig. 5–3: Recommded EMC test circuit
ton
--------------------
×
T = IDD × VDD × Rth
toff + ton
34
Dec. 22, 2008; DSH000145_003EN
Micronas
MICRONAS [ MICRONAS ]
