HAL55x, HAL56x
DATA SHEET
3.6. Characteristics
at TJ = −40 °C to +140 °C, VDD = 4 V to 24 V, GND = 0 V,
at Recommended Operation Conditions if not otherwise specified in the column “Conditions”.
Typical Characteristics for TJ = 25 °C and VDD = 12 V.
Symbol
Parameter
Pin No.
Min.
Typ.
Max.
Unit
Conditions
Low Current Consumption
over Temperature Range
I
1
2
3.3
5
mA
DD
DD
High Current Consumption
over Temperature Range
I
1
1
−
1
12
−
14.3
28.5
145
30
17
32
−
mA
V
V
Overvoltage Protection
at Supply
I
= 25 mA, T = 25 °C,
DDZ
DD J
t = 20 ms
f
t
Internal Oscillator
Chopper Frequency
−
kHz
μs
osc
1)
Enable Time of Output after
−
−
en(O)
Setting of V
DD
t
t
Output Rise Time
Output Fall Time
1
1
−
−
−
−
0.4
0.4
150
1.6
1.6
200
μs
V
V
= 12 V, R = 30 Ω
s
r
DD
μs
= 12 V, R = 30 Ω
s
f
DD
R
case
SOT89B-1
Thermal Resistance Junction
to Substrate Backside
K/W
Fiberglass Substrate
30 mm x 10 mm x 1.5 mm,
for pad size see Fig. 3–1
thJSB
R
case
Thermal Resistance Junction
to Soldering Point
−
−
150
200
K/W
thJA
TO92UA-1,
TO92UA-2
1)
B > B
+ 2 mT or B < B
- 2 mT for HAL55x, B > B
+ 2 mT or B < B - 2 mT for HAL56x
OFF ON
ON
OFF
1.80
1.05
1.45
2.90
1.05
0.50
1.50
Fig. 3–1: Recommended pad size SOT89B-1
Dimensions in mm
14
Aug. 11, 2009; DSH000026_004EN
Micronas
MICRONAS [ MICRONAS ]
