HAL55x, HAL56x
5.4. Ambient Temperature
5.5. EMC and ESD
Due to internal power dissipation, the temperature on
For applications with disturbances on the supply line or
radiated disturbances, a series resistor and a capacitor
are recommended (see Fig. 5–2). The series resistor
and the capacitor should be placed as closely as pos-
sible to the HAL sensor.
the silicon chip (junction temperature T ) is higher than
J
the temperature outside the package (ambient tempera-
ture T ).
A
T = T + ∆T
J
A
Applications with this arrangement passed the EMC
tests according to the product standards DIN 40839.
Atstaticconditionsandcontinuousoperation, thefollow-
ing equation is valid:
Note: The international standard ISO 7637 is similar to
∆T = I * V * R
th
the product standard DIN 40839.
DD
DD
For all sensors, the junction temperature range T is
Please contact Micronas for the detailed investigation
reports with the EMC and ESD results.
J
specified. The maximum ambient temperature T
Amax
can be calculated as:
T
Amax
= T
– ∆T
Jmax
R
V1
R
V2
100 Ω
30 Ω
For typical values, use the typical parameters. For worst
case calculation, use the max. parameters for I and
DD
1 V
DD
R , and the max. value for V from the application.
th
DD
V
EMC
Due to the range of I
, self-heating can be critical.
DDhigh
NC
The junction temperature can be reduced with pulsed
4.7 nF
supply voltage. For supply times (t ) ranging from 30 µs
on
to 1 ms, the following equation can be used:
2
GND
ton
DT + IDD * VDD * Rth *
toff ) ton
Fig. 5–3: Recommended EMC test circuit
Micronas
19
MICRONAS [ MICRONAS ]
