HAL55x, HAL56x
3.4. Absolute Maximum Ratings
Symbol
Parameter
Pin No.
Min.
Max.
Unit
1) 2)
2)
V
Supply Voltage
1
1
–15
28
V
DD
2)
3)
2)
I
Supply Current through
Protection Device
–50
50
mA
mA
DDZ
3)
–200
–65
200
T
T
Storage Temperature Range
Junction Temperature Range
150
150
°C
°C
S
J
–40
–40
4)
170
1)
2)
2)
3)
4)
–18 V with a 100 Ω series resistor at pin 1 (–16 V with a 30 Ω series resistor)
as long as T max is not exceeded
J
with a 220 Ω series resistance at pin 1 corresponding to test circuit 1 (see Fig. 5–3)
t<2 ms
t<1000 h
Stresses beyond those listed in the “Absolute Maximum Ratings” may cause permanent damage to the device. This
is a stress rating only. Functional operation of the device at these or any other conditions beyond those indicated in the
“Recommended Operating Conditions/Characteristics” of this specification is not implied. Exposure to absolute maxi-
mum ratings conditions for extended periods may affect device reliability.
3.5. Recommended Operating Conditions
Symbol
Parameter
Pin No.
Min.
Max.
Unit
V
DD
Supply Voltage
1
4
24
V
1)
T
A
Ambient Temperature for continuos
operation
–40
–40
85
°C
°C
2)
125
t
on
Supply Time for pulsed mode
30
–
µs
1)
2)
when using the “A” type or the ”K” type and V ≤ 16 V
DD
when using the “A” type and V ≤ 13.2 V
DD
Note: Due to the high power dissipation at high current consumption, there is a difference between the ambient temper-
ature (T ) and junction temperature. The power dissipation can be reduced by repeatedly switching the supply voltage
A
on and off (pulse mode). Please refer to section 5.4. on page 19 for details.
Micronas
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