DATA SHEET
HAL54x
5. Application Notes
5.3. Start-up Behavior
5.1. Ambient Temperature
Due to the active offset compensation, the sensors
have an initialization time (enable time ten(O)) after
applying the supply voltage. The parameter ten(O) is
specified in the characteristics table (see page 14).
Due to the internal power dissipation, the temperature
on the silicon chip (junction temperature TJ) is higher
than the temperature outside the package (ambient
temperature TA).
During the initialization time, the output state for the
HAL54x is “Off-state” (i.e. Output High). After ten(O)
,
the output will be high. The output will be switched to
TJ = TA + ΔT
low if the applied magnetic field B is above BON
.
5.4. EMC and ESD
At static conditions and continuous operation, the fol-
lowing equation applies:
For applications with disturbances on the supply line or
radiated disturbances, a series resistor and a capacitor
are recommended (see Fig. 5–1). The series resistor
and the capacitor should be placed as closely as pos-
sible to the Hall sensor.
ΔT = IDD × VDD × Rth
For typical values, use the typical parameters. For
worst case calculation, use the max. parameters for
Please contact Micronas for the detailed investigation
reports with the EMC and ESD results.
IDD and Rth, and the max. value for VDD from the appli-
cation.
R
V
For all sensors, the junction temperature range TJ is
specified. The maximum ambient temperature TAmax
can be calculated as:
220 Ω
R
1.2 kΩ
L
1
V
DD
V
V
EMC
OUT
3
P
TAmax = TJmax – ΔT
4.7 nF
20 pF
2
GND
5.2. Extended Operating Conditions
All sensors fulfill the electrical and magnetic character-
istics when operated within the Recommended Oper-
ating Conditions (see page 13).
Fig. 5–1: Test circuit for EMC investigations
Supply Voltage Below 4.3 V
The devices contain a Power-on Reset (POR) and an
undervoltage reset. For VDD < Vreset the output state is
high. For Vreset < VDD < 4.3 V the device responds to
the magnetic field according to the specified magnetic
characteristics.
Note: The functionality of the sensor below 4.3 V is not
tested. For special test conditions, please con-
tact Micronas.
Micronas
Feb. 12, 2009; DSH000023_003EN
27
MICRONAS [ MICRONAS ]
