HAL 525, HAL 526
DATA SHEET
Hall-Effect Switches
1.2. Switch Type
Release Note: Revision bars indicate significant
changes to the previous edition.
Type
Switching
Behavior
Typical
Temperature
Coefficient
see
Page
<
1. Introduction
525
latching
latching
−2000 ppm/K
−2000 ppm/K
19
21
<
The Hall switches HAL 525 and HAL 526 are pro-
526
duced in CMOS technology. These sensors include a
temperature-compensated Hall plate with active offset
compensation, a comparator, and an open-drain out-
put transistor. The comparator compares the actual
magnetic flux through the Hall plate (Hall voltage) with
the fixed reference values (switching points). Accord-
ingly, the output transistor is switched on or off.
<
Note: : HAL 525 is not available for new designs.
Please use HAL 526 instead.
The active offset compensation leads to magnetic
parameters which are robust against mechanical
stress effects. In addition, the magnetic characteristics
are constant in the full supply voltage and temperature
range.
Latching Sensor:
Latching sensors require a magnetic north and south
pole for correct functioning. The output turns low with
the magnetic south pole on the branded side of the
package and turns high with the magnetic north pole
on the branded side. The output does not change if the
magnetic field is removed. For changing the output
state, the opposite magnetic field polarity must be
applied.
This sensor is designed for industrial and automotive
applications and operates with supply voltages from
3.8 V to 24 V in the ambient temperature range from
−40 °C up to 125 °C.
<
The HAL 525 and HAL 526 are available in the
SMD package SOT89B-1 and in the leaded versions
TO92UA-1 and TO92UA-2.
1.3. Marking Code
All Hall sensors have a marking on the package sur-
face (branded side). This marking includes the name
of the sensor and the temperature range.
1.1. Features
– operates from 3.8 V to 24 V supply voltage
– operates with static magnetic fields and dynamic
magnetic fields up to 10 kHz
Type
Temperature Range
– overvoltage protection at all pins
K
E
– reverse-voltage protection at VDD-pin
<
HAL 525
HAL 526
525K
526K
−
– magnetic characteristics are robust against
mechanical stress effects
526E
– short-circuit protected open-drain output by thermal
shut down
– constant switching points over a wide supply volt-
age range
1.4. Operating Junction Temperature Range (TJ)
The Hall sensors from Micronas are specified to the
chip temperature (junction temperature TJ).
– the decrease of magnetic flux density caused by
rising temperature in the sensor system is compen-
sated by a built-in negative temperature coefficient
of the magnetic characteristics
K: TJ = −40 °C to +140 °C
E: TJ = −40 °C to +100 °C
– ideal sensor for window lifter, ignition timing, and
revolution counting in extreme automotive and
industrial environments
The relationship between ambient temperature (TA)
and junction temperature is explained in Section 5.1.
on page 23.
– EMC corresponding to ISO 7637
4
Nov. 30, 2009; DSH000144_003EN
Micronas
MICRONAS [ MICRONAS ]
