HAL 525, HAL 526
DATA SHEET
3.6. Characteristics
at TJ = −40 °C to +140 °C, VDD = 3.8 V to 24 V,
at Recommended Operation Conditions if not otherwise specified in the column “Conditions”.
Typical Characteristics for TJ = 25 °C and VDD = 12 V.
Symbol
Parameter
Pin No.
Min.
Typ.
Max.
Unit
Test Conditions
I
Supply Current over
Temperature Range
1
1.6
3
5.2
mA
DD
V
V
Overvoltage Protection
at Supply
1
3
−
−
28.5
28
32
32
V
V
I
= 25 mA, T = 25 °C,
DDZ
OZ
DD J
t = 20 ms
I = 25 mA, T = 25 °C,
OH
Overvoltage Protection at Output
J
t = 20 ms
V
V
Output Voltage
3
3
−
−
130
130
280
400
mV
mV
I
I
= 20 mA, T = 25 °C
OL
OL
OL
J
Output Voltage over
Temperature Range
= 20 mA
OL
I
I
f
Output Leakage Current
3
3
−
−
−
0.06
0.1
10
μA
μA
Output switched off,
T = 25 °C, V = 3.8 to 24 V
OH
J
OH
Output Leakage Current over
Temperature Range
−
Output switched off,
OH
osc
T ≤150 °C, V = 3.8 to 24V
J
OH
Internal Oscillator Chopper
Frequency over Temperature
Range
73
100
115
150
−
−
kHz
kHz
HAL 525
HAL 526
t
Enable Time of Output after
1
−
30
70
μs
V
= 12 V
en(O)
DD
Setting of V
B > B
B < B
+ 2 mT or
ON
DD
− 2 mT
OFF
t
t
Output Rise Time
Output Fall Time
3
3
−
−
75
50
400
400
ns
ns
V
= 12 V,
DD
r
R = 820 Ω,
C = 20 pF
L
f
L
SOT89B Package
Thermal Resistance
30 mm x 10 mm x 1.5 mm,
pad size (see Fig. 3–6)
1)
R
R
R
Junction to Ambient
Junction to Case
−
−
−
−
−
−
−
−
−
209
K/W
K/W
K/W
thja
thjc
thjs
1)
56
2)
Junction to Solder Point
82
TO92UA Package
Thermal Resistance
1)
R
R
R
Junction to Ambient
Junction to Case
−
−
−
−
−
−
−
−
−
246
K/W
K/W
K/W
thja
thjc
thjs
1)
70
2)
Junction to Solder Point
127
1)
2)
Measured with a 1s0p board
Measured with a 1s1p board
14
Nov. 30, 2009; DSH000144_003EN
Micronas
MICRONAS [ MICRONAS ]
