HAL 525, HAL 526
Hall-Effect Switches
Release Note: Revision bars indicate significant
changes to the previous edition.
1.2. Switch Type
Type
Switching
Behavior
latching
latching
DATA SHEET
Typical
Temperature
Coefficient
−2000
ppm/K
−2000
ppm/K
see
Page
1. Introduction
<
525
526
<
The Hall switches HAL 525 and HAL 526 are pro-
duced in CMOS technology. These sensors include a
temperature-compensated Hall plate with active offset
compensation, a comparator, and an open-drain out-
put transistor. The comparator compares the actual
magnetic flux through the Hall plate (Hall voltage) with
the fixed reference values (switching points). Accord-
ingly, the output transistor is switched on or off.
The active offset compensation leads to magnetic
parameters which are robust against mechanical
stress effects. In addition, the magnetic characteristics
are constant in the full supply voltage and temperature
range.
This sensor is designed for industrial and automotive
applications and operates with supply voltages from
3.8 V to 24 V in the ambient temperature range from
−40 °C
up to 125
°C.
Note:
<
: HAL 525 is not available for new designs.
Please use HAL 526 instead.
Latching Sensor:
Latching sensors require a magnetic north and south
pole for correct functioning. The output turns low with
the magnetic south pole on the branded side of the
package and turns high with the magnetic north pole
on the branded side. The output does not change if the
magnetic field is removed. For changing the output
state, the opposite magnetic field polarity must be
applied.
<
The HAL 525 and HAL 526 are available in the
SMD package SOT89B-1 and in the leaded versions
TO92UA-1 and TO92UA-2.
1.1. Features
– operates from 3.8 V to 24 V supply voltage
– operates with static magnetic fields and dynamic
magnetic fields up to 10 kHz
– overvoltage protection at all pins
– reverse-voltage protection at V
DD
-pin
– magnetic characteristics are robust against
mechanical stress effects
– short-circuit protected open-drain output by thermal
shut down
– constant switching points over a wide supply volt-
age range
– the decrease of magnetic flux density caused by
rising temperature in the sensor system is compen-
sated by a built-in negative temperature coefficient
of the magnetic characteristics
– ideal sensor for window lifter, ignition timing, and
revolution counting in extreme automotive and
industrial environments
– EMC corresponding to ISO 7637
1.3. Marking Code
All Hall sensors have a marking on the package sur-
face (branded side). This marking includes the name
of the sensor and the temperature range.
Type
K
Temperature Range
E
−
526E
<
HAL 525
HAL 526
525K
526K
1.4. Operating Junction Temperature Range (T
J
)
The Hall sensors from Micronas are specified to the
chip temperature (junction temperature T
J
).
K:
T
J
=
−40 °C
to +140
°C
E:
T
J
=
−40 °C
to +100
°C
The relationship between ambient temperature (T
A
)
and junction temperature is explained in Section 5.1.
4
Nov. 30, 2009; DSH000144_003EN
Micronas
MICRONAS [ MICRONAS ]
