HAL401
DATA SHEET
4. Application Notes
4.3. Application Circuit
Mechanical stress on the device surface (caused by the
package of the sensor module or overmolding) can influ-
ence the sensor performance.
The normal integrating characteristics of a voltmeter is
sufficient for signal filtering.
V
DD
The parameter V
(see Fig. 2–2) increases with
OUTACpp
external mechanical stress. This can cause linearity er-
rors at the limits of the recommended operation condi-
tions.
4.7n
1
47 n
330 p
V
DD
Oscillo-
scope
HAL401
OUT1
2
Ch1
4.1. Ambient Temperature
3.3 k
6.8 n
3.3 k
1 k
1 k
3
Due to internal power dissipation, the temperature on
OUT2
Ch2
the silicon chip (junction temperature T ) is higher than
the temperature outside the package (ambient tempera-
J
47 n
330 p
ture T ).
A
GND
4
T = T + ΔT
J
A
Do not connect OUT1 or OUT2 to Ground.
Atstaticconditionsandcontinuousoperation, thefollow-
ing equation applies:
Fig. 4–1: Filtering of output signals
ΔT = I * V * R
thJSB
DD
DD
Display the difference between channel 1 and channel
2 to show the Hall voltage. Capacitors 4.7 nF and 330 pF
for electromagnetic immunity are recommended.
For all sensors, the junction temperature range T is
J
specified. The maximum ambient temperature T
can be calculated as:
Amax
V
DD
T
Amax
= T
– ΔT
Jmax
1
For typical values, use the typical parameters. For worst
V
DD
case calculation, use the max. parameters for I and
DD
Voltage
Meter
R , and the max. value for V from the application.
HAL401
OUT1
th
DD
2
3
High
4.2. EMC and ESD
OUT2
Low
Please contact Micronas for detailed information on
EMC and ESD results.
GND
4
Do not connect OUT1 or OUT2 to Ground.
Fig. 4–2: Flux density measurement with voltmeter
18
Micronas
MICRONAS [ MICRONAS ]
