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HAL300SF-K 参数 Datasheet PDF下载

HAL300SF-K图片预览
型号: HAL300SF-K
PDF下载: 下载PDF文件 查看货源
内容描述: 差分霍尔效应传感器IC [Differential Hall Effect Sensor IC]
分类和应用: 传感器
文件页数/大小: 22 页 / 1623 K
品牌: MICRONAS [ MICRONAS ]
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HAL300  
DATA SHEET  
3.6. Characteristics at T = –40 °C to +170 °C , V = 4.5 V to 24 V, GND = 0 V  
J
DD  
at Recommended Operation Conditions if not otherwise specified in the column “Conditions”.  
Typical Characteristics for T = 25 °C and V = 12 V  
J
DD  
Symbol  
Parameter  
Pin No.  
Limit Values  
Typ.  
Unit  
Conditions  
Min.  
4.0  
Max.  
6.8  
I
I
Supply Current  
1
1
5.5  
5
mA  
mA  
T = 25 °C  
J
DD  
Supply Current over  
Temperature Range  
2.5  
7.5  
DD  
V
V
V
Overvoltage Protection  
at Supply  
1
3
3
3
3
28.5  
28  
32.5  
32.5  
400  
10  
V
I
= 25 mA, T = 25 °C,  
DDZ  
DD J  
t = 20 ms  
I = 25 mA, T = 25 °C,  
OL  
OvervoltageProtectionatOutput  
V
OZ  
J
t = 20 ms  
Output Voltage over  
Temperature Range  
180  
0.06  
62  
mV  
μA  
kHz  
μs  
I
O
= 20 mA  
OL  
I
f
t
Output Leakage Current over  
Temperature Range  
V
= 4.5 V...24 V,  
OH  
OH  
DB < DB  
, T 150 °C  
J
OFF  
Internal Oscillator  
Chopper Frequency  
osc  
Enable Time of Output  
35  
V
= 12 V,  
en(O)  
DD  
after Setting of V  
DB > DB + 2mT or  
DD  
ON  
DB < DB  
– 2mT  
OFF  
t
t
Output Rise Time  
Output Fall Time  
3
3
80  
400  
400  
200  
ns  
V
= 12 V, RL = 820 Ω,  
r
DD  
CL = 20 pF  
V = 12 V, RL = 820 Ω,  
DD  
45  
ns  
f
CL = 20 pF  
R
case  
SOT89B-2  
Thermal Resistance Junction to  
Substrate Backside  
150  
K/W  
Fiberglass Substrate  
30 mm x 10 mm x 1.5 mm,  
pad size see Fig. 3–6  
thJSB  
R
Thermal Resistance  
150  
200  
K/W  
thJS  
case  
Junction to Soldering Point  
TO92UA-3,  
TO92UA-4  
1.80  
1.05  
1.45  
2.90  
1.05  
0.50  
1.50  
Fig. 3–6:  
Recommended footprint SOT89B, Dimensions in mm  
All dimensions are for reference only. The pad size may vary depending on the requirements of the soldering process.  
14  
Micronas  
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