HAL300
Electrical Characteristics at T = –40 °C to +170 °C , V = 4.5 V to 24 V, as not otherwise specified in Conditions
J
DD
Typical Characteristics for T = 25 °C and V = 12 V
J
DD
Symbol
Parameter
Pin No.
Min.
Typ.
5.5
5
Max.
6.8
Unit
mA
mA
Conditions
T = 25 °C
I
I
Supply Current
1
1
4.0
2.5
DD
DD
J
Supply Current over
Temperature Range
7.5
V
V
V
V
Overvoltage Protection
at Supply
1
3
3
3
3
3
–
–
3
–
28.5
28
32.5
32.5
250
400
1
V
I
= 25 mA, T = 25 °C,
DDZ
OZ
DD J
t = 20 ms
I = 25 mA, T = 25 °C,
OL
OvervoltageProtectionatOutput
Output Voltage
–
V
J
t = 20 ms
–
180
180
0.06
0.06
62
mV
mV
µA
µA
kHz
kHz
µs
V
DD
T = 25 °C
= 12 V, I = 20 mA,
OL
O
J
Output Voltage over
Temperature Range
–
I = 20 mA
O
OL
I
I
f
f
t
Output Leakage Current
–
V
= 4.5 V...24 V,
OH
OH
DB < DB
, T = 25 °C
J
OFF
Output Leakage Current over
Temperature Range
–
10
V
= 4.5 V...24 V,
OH
OH
DB < DB
, T ≤ 150 °C
J
OFF
Internal Oscillator
Chopper Frequency
42
36
–
75
T = 25 °C
J
osc
Internal Oscillator Chopper Fre-
quencyover TemperatureRange
62
78
osc
Enable Time of Output
35
–
V
= 12 V,
en(O)
DD
after Setting of V
DB > DB + 2mT or
DD
ON
DB < DB
– 2mT
OFF
t
t
Output Rise Time
Output Fall Time
3
3
–
–
–
80
400
400
200
ns
V
= 12 V, RL = 820 Ω,
r
DD
CL = 20 pF
V = 12 V, RL = 820 Ω,
DD
45
ns
f
CL = 20 pF
R
case
SOT-89A
Thermal Resistance Junction to
Substrate Backside
150
K/W
Fiberglass Substrate
30 mm x 10 mm x 1.5mm,
pad size see Fig. 7
thJSB
R
Thermal Resistance
–
150
200
K/W
thJS
case
Junction to Soldering Point
TO-92UA
6
Micronas
MICRONAS [ MICRONAS ]
