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HAL115UA-K 参数 Datasheet PDF下载

HAL115UA-K图片预览
型号: HAL115UA-K
PDF下载: 下载PDF文件 查看货源
内容描述: 霍尔效应传感器系列 [Hall Effect Sensor Family]
分类和应用: 传感器换能器
文件页数/大小: 17 页 / 147 K
品牌: MICRONAS [ MICRONAS ]
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HAL11x
1.4. Operating Junction Temperature Range
The Hall sensors from Micronas are specified to the chip
temperature (junction temperature T
J
).
K:
T
J
= –40
°C
to +140
°C
E:
T
J
= –40
°C
to +100
°C
C:
T
J
= 0
°C
to +100
°C
The relationship between ambient temperature (T
A
) and
junction temperature is explained in section 5.2. on page
14.
1.5. Hall Sensor Package Codes
HALXXXPA-T
Temperature Range: K, E, or C
Package: SF for SOT-89B
UA for TO-92UA
(SO for SOT-89A)
Type: 11x
Example:
HAL114UA-E
Type: 114
Package: TO-92UA
Temperature Range: T
J
= –40
°C
to +100
°C
Hall sensors are available in a wide variety of packaging
versions and quantities. For more detailed information,
please refer to the brochure: “Ordering Codes for Hall
Sensors”.
1.6. Solderability
all packages: according to IEC68-2-58
During soldering reflow processing and manual
reworking, a component body temperature of 260
°C
should not be exceeded.
Components stored in the original packaging should
provide a shelf life of at least 12 months, starting from the
date code printed on the labels, even in environments as
extreme as 40
°C
and 90% relative humidity.
V
DD
1
OUT
V
DD
1
Reverse
Voltage &
Overvoltage
Protection
2. Functional Description
The HAL 11x sensors are monolithic integrated circuits
which switch in response to magnetic fields. If a
magnetic field with flux lines perpendicular to the
sensitive area is applied to the sensor, the biased Hall
plate forces a Hall voltage proportional to this field. The
Hall voltage is compared with the actual threshold level
in the comparator. The temperature-dependent bias
increases the supply voltage of the Hall plates and
adjusts the switching points to the decreasing induction
of magnets at higher temperatures. If the magnetic field
exceeds the threshold levels, the open drain output
switches to the appropriate state. The built-in hysteresis
eliminates oscillation and provides switching behavior of
output without bouncing.
Shunt protection devices clamp voltage peaks at the
Output-pin and V
DD
-pin together with external series
resistors. Reverse current is limited at the V
DD
-pin by an
internal series resistor up to –15 V. No external reverse
protection diode is needed at the V
DD
-pin for reverse
voltages ranging from 0 V to –15 V.
HAL11x
Temperature
Dependent
Bias
Hysteresis
Control
Short Circuit &
Overvoltage
Protection
Hall Plate
Comparator
Output
OUT
3
GND
2
Fig. 2–1:
HAL11x block diagram
3
2
GND
Fig. 1–1:
Pin configuration
4
Micronas