HAL11x
3.6. Electrical Characteristics
at T
J
= –40
°C
to +140
°C
, V
DD
= 4.5 V to 24 V, as not otherwise specified in Conditions
Typical Characteristics for T
J
= 25
°C
and V
DD
= 12 V
Symbol
I
DD
I
DD
V
OL
V
OL
I
OH
I
OH
t
en(O)
Parameter
Supply Current
Supply Current over
Temperature Range
Output Voltage over
Temperature Range
Output Voltage over
Temperature Range
Output Leakage Current
Pin No.
1
1
Min.
6
3.9
Typ.
8.2
8.2
Max.
11
12
Unit
mA
mA
Conditions
T
J
= 25
°C
3
–
120
400
mV
I
OL
= 12.5 mA
I
OL
= 20 mA
B < B
off
,
T
J
= 25
°C,
V
OH
= 0 to 24 V
B < B
off
,
V
OH
= 0 to 24 V
V
DD
= 12 V
B > B
ON
+ 2 mT or
B < B
OFF
– 2 mT
V
DD
= 12 V, R
L
= 820 Ohm,
C
L
= 20 pF
V
DD
= 12 V, R
L
= 820 Ohm,
C
L
= 20 pF
Fiberglass Substrate
30 mm x 10 mm x 1.5mm,
pad size see Fig. 3–4
3
–
190
500
mV
µA
µA
µs
3
–
0.06
1
Output Leakage Current over
Temperature Range
Enable Time of Output after
Setting of V
DD
3
–
–
10
1
–
6
10
t
r
t
f
R
thJSB
case
SOT-89A
SOT-89B
R
thJA
case
TO-92UA
Output Rise Time
3
–
0.08
0.4
µs
µs
Output Fall Time
3
–
0.06
0.4
Thermal Resistance Junction
to Substrate Backside
–
–
150
200
K/W
Thermal Resistance Junction
to Soldering Point
–
–
150
200
K/W
5.0
2.0
2.0
1.0
Fig. 3–4:
Recommended pad size SOT-89x
Dimensions in mm
Micronas
7