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HAL114SF-K 参数 Datasheet PDF下载

HAL114SF-K图片预览
型号: HAL114SF-K
PDF下载: 下载PDF文件 查看货源
内容描述: 霍尔效应传感器系列 [Hall Effect Sensor Family]
分类和应用: 传感器
文件页数/大小: 17 页 / 147 K
品牌: MICRONAS [ MICRONAS ]
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HAL115  
4.2. HAL115  
Applications  
TheHAL115isabipolarswitchingsensor(seeFig. 4–5).  
The HAL115 is the optimal sensor for all applications  
with alternating magnetic signals at the sensor position  
such as:  
The output turns low with the magnetic south pole on the  
branded side of the package and turns high with the  
magnetic north pole on the branded side. The output  
state is not defined for all sensors if the magnetic field is  
removed again. Some sensors will change the output  
state and some sensors will not.  
– rotating speed measurement,  
– commutation of brushless DC-motors and cooling  
fans.  
For correct functioning in the application, the sensor re-  
quires both magnetic polarities (north and south) on the  
branded side of the package.  
Output Voltage  
V
O
B
HYS  
Magnetic Features:  
– switching type: bipolar  
– high sensitivity  
V
OL  
– typical B : 1.2 mT at room temperature  
ON  
B
OFF  
0
B
ON  
B
– typical B  
: –1.2 mT at room temperature  
OFF  
Fig. 4–5:Definitionofmagneticswitchingpointsforthe  
HAL115  
– operates with static magnetic fields and dynamic mag-  
netic fields up to 20 kHz  
Magnetic Characteristics at T = –40 °C to +140 °C, V = 4.5 V to 24 V,  
J
DD  
Typical Characteristics for V = 12 V  
DD  
Magnetic flux density values of switching points.  
Positive flux density values refer to the magnetic south pole at the branded side of the package.  
Parameter  
On point B  
Typ.  
Off point B  
Typ.  
Hysteresis B  
Typ.  
Unit  
ON  
OFF  
HYS  
T
J
Min.  
Max.  
12.5  
12.5  
12.5  
12.5  
Min.  
Max.  
10.7  
10.7  
10.7  
10.7  
Min.  
1.8  
1.8  
1.5  
1
Max.  
–40 °C  
–10.7  
–10.7  
–10.7  
–10.7  
1.4  
1.2  
1
–12.5  
–12.5  
–12.5  
–12.5  
–1.4  
–1.2  
–1  
2.8  
2.4  
2
7
7
7
7
mT  
mT  
mT  
mT  
25 °C  
100 °C  
140 °C  
0.9  
–0.9  
1.8  
The hysteresis is the difference between the switching points B  
= B – B  
ON OFF  
HYS  
The magnetic limits given above refer to parts in the original packaging. Mechanical stress on the hall sensitive areas  
on the chip surface may generate an additional magnetic offset, which can slightly change the magnetic switching  
points. Thisbehaviorisaphysicalphenomenonandnotamalfunctionofthesensor. Mechanicalstressonthehallplates  
can be caused, for example, by overmoulding the plastic package or by wide range temperature changes like soldering  
or operating the parts at extreme temperatures.  
Please use a sensor of the HAL5xx family if higher robustness against mechanical stress is required.  
12  
Micronas